Digital output motion sensor for automotive applications low-power high performance 3-axes accelerometer

The AIS326DQ is a three axes digital output accelerometer that includes a sensing element and an IC interface able to take the information from the sensing element and to provide the measured acceleration signals to the external world through an SPI serial interface. I²C compatible interface is also • 3.3 V single supply operation\n• 1.8 V compatible IOs\n• SPI digital output interface\n• 12 bit resolution\n• Interrupt activated by motion• Programmable interrupt threshold\n• Embedded self-test\n• High shock survivability\n• ECOPACK®compliant\n• Extended temperature range -40 °C to +105 °C;

MEMS inertial sensor 3-axis, low g accelerometer with digital output

文件：662.5 Kbytes Page：49 Pages

封装/外壳：28-QFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ACCEL 2-6G I2C/SPI 28QFPN 传感器，变送器 运动传感器 - 加速计

封装/外壳：28-QFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ACCEL 2-6G I2C/SPI 28QFPN 传感器，变送器 运动传感器 - 加速计

MEMS inertial sensor 3-axis, low g accelerometer with digital output

文件：662.5 Kbytes Page：49 Pages

振动和加速度传感器

POWER TRANSISTORS(6A,375-400V,75W)

NPN SILICON POWER TRANSISTOR The BU326 and BU326A Type are a fast switching high voltage transistor, more specially intended for in color TV receivers chopper supplies.

POWER TRANSISTORS(6A,375-400V,75W)

NPN SILICON POWER TRANSISTOR The BU326 and BU326A Type are a fast switching high voltage transistor, more specially intended for in color TV receivers chopper supplies.

HIGH VOLTAGE NPN SILICON POWER TRANSISTOR

DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system. ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN TRANSISTOR ■ FAST SWITCHING SPEED APPLICATIONS: ■ POWER SUPPLIES ■ LINEAR AND SWITCHING IND

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts Minimum Gain = 9.0 dB • Built–In Matching Network for Broadb

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Silicon P–Channel JFET Transistor General Purpose AF Amplifi