CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 116 A at TC = 25°C • RDS(on) = 19 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest de

汽车级 CoolSiC ™ MOSFET 1200 V，Q-DPAK（HDSOP-22-3），19 mΩ

Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 104 A at TC = 25°C • RDS(on) = 19 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest de

CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 100 A at TC = 25°C • RDS(on) = 19 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class swit

CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 100 A at TC = 25°C • RDS(on) = 19 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class swit

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(on)= 19mΩ（TYP.）@VGS=18V Tj=25℃ ·Very low switching losses APPLICATIONS ·Solar power optimizer ·Online UPS/Industrial UP ·DC-DC Converters ·String inverters