Duo Pack EDT2™ IGBT and emitter controlled diode in TO247PLUS package

Features • VCE = 750 V • IC = 120 A • Suitable for 470 V VDC systems and increased overvoltage margin for 400 V VDC systems • Very low VCEsat (C-KE) = 1.21 V (typ.) at ICnom = 120 A, 25°C • Up to 40% less System Rth due to reflow capability, increased power output • 30% Less Turn On

750 V、120 A EDT2 IGBT，带反并联二极管，采用可回流焊接的 TO247PLUS 4 针封装

EDT2 IGBT and emitter controlled diode in TO247PLUS package

Features • VCE = 750 V • IC = 120 A • 750 V collector-emitter blocking voltage capability • Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems • Very low VCE(sat), 1.30 V at ICnom = 120 A, 25°C • Short circuit robust tsc = 5 μs at VCE = 470 V, VGE = 15 V •

Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features • VCE = 750 V • IC = 120 A • Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems • Very low VCEsat = 1.3 V (typ.) at ICnom = 120 A, 25°C • Short circuit robust tsc = 5 μs at VCE = 470 V, VGE = 15 V • Up to 40% less System Rth due to reflow capabi

Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features • VCE = 750 V • IC = 120 A • Low saturation voltage VCEsat = 1.4 V • Low switching losses • Short circuit ruggedness 3 μs • IGBT co-packed with full current, soft and fast recovery diode • Optimized for hard switching topologies up to 10 KHz • Package backside suitable for reflow