型号 功能描述 生产厂家 企业 LOGO 操作
AIGBE40N65F5

High speed FAST IGBT in TRENCHSTOPTM 5 F5 technology

Features and Benefits: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress tested • Qualified according to AEC-Q101 • Pb-free lead plating; RoHS compliant • Innovative

Infineon

英飞凌

AIGBE40N65F5

采用小型 SMD 封装的世界一流低成本电源,适用于快速开关应用

Infineon

英飞凌

High speed FAST IGBT in TRENCHSTOPTM 5 technology

Features and Benefits: High speed F5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress tested • Qualified according to AEC-Q101 • Green package (

Infineon

英飞凌

High speed fast IGBT in TRENCHSTOPTM 5 technology

文件:1.80213 Mbytes Page:14 Pages

Infineon

英飞凌

High speed 5 FAST IGBT in TRENCHSTOP 5 technology

文件:2.49694 Mbytes Page:15 Pages

Infineon

英飞凌

650V IGBT high speed switching series fifth generation

文件:2.30767 Mbytes Page:15 Pages

Infineon

英飞凌

更新时间:2025-9-27 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
松下
23+
7300
专注配单,只做原装进口现货
INFINEON/英飞凌
24+
PG-TO263-7-11
60000
Infineon
23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
10000
AIGBE40N65F5 贴片 TO263-7 INFINEON/英飞凌 全新 现货 原装正品
Panasonic
25+
电联咨询
7800
公司现货,提供拆样技术支持
英飞凌
24+
5000
全新、原装

AIGBE40N65F5数据表相关新闻