High speed IGBT in TRENCHSTOPTM 5 technology

Features and Benefits: High speed H5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • Plug and play replacement of previous generation IGBTs • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress te

采用小型 SMD 封装的世界一流低成本电源，适用于快速开关应用

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DISCRETE SWITCHES 分立半导体产品 晶体管 - UGBT、MOSFET - 单

BIDW40N65H5 Insulated Gate Bipolar Transistor (IGBT)

Features n 650 V, 40 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Novel trench-gate field-stop technology n Optimized for conduction n High-speed switching n Maximum operating Tj = 175 °C n RoHS compliant* Applications n Switched-Mode Power Supplies (SMPS) n Uninterruptible

High speed fast IGBT in TRENCHSTOPTM 5 technology

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650V IGBT high speed switching series fifth generation

文件：2.30811 Mbytes Page：15 Pages

High speed 5 IGBT in TRENCHSTOP 5 technology

文件：2.48832 Mbytes Page：15 Pages