2.3-2.9 GHz WiMAX 2W Driver Amplifier

Product Description The AH314 is a high dynamic range broadband driver amplifier in a surface mount package. The two-stage amplifier has 23 dB of gain, while achieving +24 dBm of linear output power for 2.3–2.9 GHz WiMAX/WiBro applications. AH314 uses a high reliability +5V InGaP/GaAs HBT pr

2.3-2.9 GHz WiMAX 2W Driver Amplifier

2.3-2.9 GHz WiMAX 2W Driver Amplifier

Product Description The AH314 is a high dynamic range broadband driver amplifier in a surface mount package. The two-stage amplifier has 23 dB of gain, while achieving +24 dBm of linear output power for 2.3–2.9 GHz WiMAX/WiBro applications. AH314 uses a high reliability +5V InGaP/GaAs HBT pr

2.3-2.9 GHz WiMAX 2W Driver Amplifier

Product Description The AH314 is a high dynamic range broadband driver amplifier in a surface mount package. The two-stage amplifier has 23 dB of gain, while achieving +24 dBm of linear output power for 2.3–2.9 GHz WiMAX/WiBro applications. AH314 uses a high reliability +5V InGaP/GaAs HBT pr

2.3-2.9 GHz 2W 5V Linear Driver Amplifier

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Unipolar Type Hall Sensor

文件：673.02 Kbytes Page：9 Pages

Unipolar Type Hall Sensor

文件：670.29 Kbytes Page：9 Pages

单磁极霍尔集成电路

单磁极霍尔集成电路

Unipolar Type Hall Sensor

文件：667.8 Kbytes Page：9 Pages

2.3-2.9 GHz 2W 5V Linear Driver Amplifier

文件：406.62 Kbytes Page：9 Pages

2.3-2.9 GHz 2W 5V Linear Driver Amplifier

文件：406.62 Kbytes Page：9 Pages

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 610 mV to 940 mV • Total power dissipation: max. 400 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch