2 Watt, High Linearity InGaP HBT Amplifier

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2 Watt, High Linearity InGaP HBT Amplifier

Product Description\nThe AH312 / ECP200 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in • 400 – 2300 MHz\n• +33 dBm P1dB\n• +51 dBm Output IP3\n• 18 dB Gain @ 900 MHz\n• 11 dB Gain @ 1960 MHz\n• Single Positive Supply (+5V)\n• Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg.;

400 - 2300 MHz, 2 Watt Linear Amplifier

Qorvo's AH312-S8G is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP / GaAs HBT is able to achieve high performance for various narrowband tuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in a lead-free / RoHS-c ·400 to 2300 MHz\n·+33 dBm P1dB\n·+51 dBm Output IP3\n·18 dB Gain @ 900 MHz\n·+5V single positive supply\n·MTTF > 100 years\n·Lead-free / RoHS compliant\n·SOIC-8 SMT package;

2 Watt, High Linearity InGaP HBT Amplifier

文件：861.43 Kbytes Page：9 Pages

2 Watt, High Linearity InGaP HBT Amplifier

文件：861.43 Kbytes Page：9 Pages

2 Watt, High Linearity InGaP HBT Amplifier

文件：356.58 Kbytes Page：7 Pages

2 Watt, High Linearity InGaP HBT Amplifier

文件：861.43 Kbytes Page：9 Pages

2 Watt, High Linearity InGaP HBT Amplifier

文件：861.43 Kbytes Page：9 Pages

2 Watt, High Linearity InGaP HBT Amplifier

文件：356.58 Kbytes Page：7 Pages

2 Watt, High Linearity InGaP HBT Amplifier

文件：356.58 Kbytes Page：7 Pages

2 Watt, High Linearity InGaP HBT Amplifier

文件：861.43 Kbytes Page：9 Pages

2 Watt, High Linearity InGaP HBT Amplifier

文件：356.58 Kbytes Page：7 Pages

2 Watt, High Linearity InGaP HBT Amplifier

文件：861.43 Kbytes Page：9 Pages

Sequencing Hotswap Controllers

General Description The HV302 and HV312 Hotswap Controllers perform current limiting, circuit breaker protection, over and under voltage detection power management functions during insertion of cards or modules into live backplanes and connectors. Theymaybe used in systems where active contro

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

Operational Amplifiers

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