High capacity 2 Amp, Flat and Compact package Telephone switchboard

FEATURES 1. High capacity: 2 A 2. Compact flat body saves space With a small footprint of 10.6 mm (L) × 7.2 mm (W) .417 inch (L) × .283 inch (W) for space savings, it also has a very short height of 5.2 mm .205 inch. (Standard PC board type.) 3. High sensitivity single side stable typ

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ULTRA-SMALL PACKAGE FLAT POLARIZED RELAY

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ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac

2.5 Watts, 935-960 MHz Cellular Radio RF Power Transistor

Description The 20009 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 2.5 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold met