丝印代码：AFE5803；Fully Integrated, 8-Channel Ultrasound Analog Front End, 0.75 nV/rtHz, 14/12-Bit, 65 MSPS, 158 mW/CH

1FEATURES • 8-Channel Complete Analog Front-End – LNA, VCAT, PGA, LPF, ADC • Programmable Gain Low-Noise Amplifier (LNA) – 24/18/12 dB Gain – 0.25/0.5/1 VPP Linear Input Range – 0.63/0.7/0.9 nV/rtHz Input Referred Noise – Programmable Active Termination • 40 dB Low Noise Voltage Controlle

Fully Integrated, 8-Channel Ultrasound Analog Front End

文件：790.58 Kbytes Page：52 Pages

Fully Integrated, 8-Channel Ultrasound Analog Front End, 0.75 nV/rtHz, 14/12-Bit, 65 MSPS, 158 mW/CH

文件：791.79 Kbytes Page：53 Pages

封装/外壳：135-BGA 包装：卷带（TR） 描述：IC AFE 8 CHAN 14BIT 135NFBGA 集成电路（IC） 模拟前端（AFE）

丝印代码：AFE5803；Fully Integrated, 8-Channel Ultrasound Analog Front End, 0.75 nV/rtHz, 14/12-Bit, 65 MSPS, 158 mW/CH

1FEATURES • 8-Channel Complete Analog Front-End – LNA, VCAT, PGA, LPF, ADC • Programmable Gain Low-Noise Amplifier (LNA) – 24/18/12 dB Gain – 0.25/0.5/1 VPP Linear Input Range – 0.63/0.7/0.9 nV/rtHz Input Referred Noise – Programmable Active Termination • 40 dB Low Noise Voltage Controlle

丝印代码：AFE5803；Fully Integrated, 8-Channel Ultrasound Analog Front End, 0.75 nV/rtHz, 14/12-Bit, 65 MSPS, 158 mW/CH

1FEATURES • 8-Channel Complete Analog Front-End – LNA, VCAT, PGA, LPF, ADC • Programmable Gain Low-Noise Amplifier (LNA) – 24/18/12 dB Gain – 0.25/0.5/1 VPP Linear Input Range – 0.63/0.7/0.9 nV/rtHz Input Referred Noise – Programmable Active Termination • 40 dB Low Noise Voltage Controlle

Power MOSFET(Vdss=-40V)

Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

High Voltage Color Display Horizontal Deflection Output(No Damper Diode)

High Voltage Color Display Horizontal Deflection Output (No Damper Diode) • High Breakdown Voltage : BVCBO=1500V • High Speed Switching : tF=0.1µs (Typ.) • Wide S.O.A • For C-Monitor(85KHz)

DC / DC Converter Applications

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with an N-Channel Sillicon MOSFET (MCH3408) and a Schottky Barrier Diode (SBS006M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed swi

Multi-function Digital Filter for Digital Audio

OVERVIEW The SM5803AP/APT is a multi-function digital filter for digital audio fabricated using NPCs original molybdenum-gate CMOS technology.

Multi-function Digital Filter for Digital Audio

OVERVIEW The SM5803AP/APT is a multi-function digital filter for digital audio fabricated using NPCs original molybdenum-gate CMOS technology.