丝印代码：4502C；P & N-Channel 30-V (D-S) MOSFET

文件：235.41 Kbytes Page：8 Pages

P & N-Channel 30-V (D-S) MOSFET

P & N-Channel 30-V (D-S) MOSFET

文件：235.41 Kbytes Page：8 Pages

P & N-Channel 30-V (D-S) MOSFET

文件：235.41 Kbytes Page：8 Pages

V(ds): N-channel: 30V; P-vhannel: -30; V(gs): N.: 20V ; P.: -25V; P & N-channel 30-V (D-S) MOSFET

P & N-Channel 30-V (D-S) MOSFET

文件：235.41 Kbytes Page：8 Pages

P & N-Channel 30-V (D-S) MOSFET

文件：235.41 Kbytes Page：8 Pages

N- and P-Channel 30 V (D-S) MOSFET

文件：2.6239 Mbytes Page：14 Pages

Strobed hex inverter/buffer

The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability.

Strobed hex inverter/buffer

The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability.

Strobed hex inverter/buffer

The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability.

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half