Small, Low Power, 2-Axis 짹3 g i MEMS Accelerometer

GENERAL DESCRIPTION The ADXL323 is a small, thin, low power, complete 2-axis accelerometer with signal-conditioned voltage outputs, all on a single, monolithic IC. The product measures acceleration with a minimum full-scale range of ±3 g. It can measure the static acceleration of gravity in tilt-

小尺寸、低功耗、双轴±3G iMEMS® 加速度计

ADXL323是一款小尺寸、低功耗（1.8V时为180µA)、双轴iMEMS®加速度计，提供经过信号调理的电压输出，所有功能均集成于一个单芯片IC中。该产品的满量程加速度测量范围为±3g（最小值），既可以测量倾斜检测应用中的静态加速度，也可以测量运动、冲击或振动导致的动态加速度。ADXL323采用1.8V至5.25V宽电压范围内的电源供电，提供小尺寸4 mm × 4 mm × 1.45 mm、16引脚塑封LFCSP封装。\n\n\n\n应用\n\n-移动设备中的运动和倾斜检测\n\n-手机\n\n-支持运动检测的游戏设备\n\n-磁盘驱动器保护系统\n\n-运动和保健器材 • 双轴检测\n\n• 小尺寸、薄型封装：4 mm × 4 mm × 1.45 mm LFCSP_LQ\n\n• 低功耗：180 µA（VS = 1.8 V，典型值）\n\n• 单电源供电：1.8 V至5.25 V;

Small, Low Power, 2-Axis 짹3 g i MEMS Accelerometer

GENERAL DESCRIPTION The ADXL323 is a small, thin, low power, complete 2-axis accelerometer with signal-conditioned voltage outputs, all on a single, monolithic IC. The product measures acceleration with a minimum full-scale range of ±3 g. It can measure the static acceleration of gravity in tilt-

Small, Low Power, 2-Axis 짹3 g i MEMS Accelerometer

GENERAL DESCRIPTION The ADXL323 is a small, thin, low power, complete 2-axis accelerometer with signal-conditioned voltage outputs, all on a single, monolithic IC. The product measures acceleration with a minimum full-scale range of ±3 g. It can measure the static acceleration of gravity in tilt-

Small, Low Power, 2-Axis 3 g iMEMS Accelerometer

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DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS

NPN Silicon Darlington Power Transistor ​​​​​​​ TheBU323AP is a monolithic darlington transistor designedfor automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —VCER(sus)= 475 Vdc • 125 Watts Capability at 50 Volts • VCESat Specifie

AUTOPROTECTED DARLINGTON 10 AMPERES 360-450 VOLTS CLAMP 150 WATTS

NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min • 10

3-Amp, 5-Volt Positive Regulator

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3-Amp, 5-Volt Positive Regulator

文件：203.43 Kbytes Page：8 Pages