带输入禁用和2个反向通道的鲁棒、四通道隔离器

ADuM140D/ADuM140E/ADuM141D/ADuM141E/ ADuM142D/ADuM142E均为采用ADI公司iCoupler®技术的4通道数字隔离器，其中只有ADuM140D和ADuM140E已上市。 这些隔离器件将高速、互补金属氧化物半导体(CMOS)与单芯片空芯变压器技术融为一体，具有优于光耦合器件和其它集成式耦合器等替代器件的出色性能特征。 这些器件的最大传播延迟为13 ns，在5 V下脉冲宽度失真小于3 ns。 具有严格的3.0 ns（最大值）通道匹配。 \n\n ADuM140D/ADuM140E/ADuM141D/ADuM141E/ ADuM142D/A • 高共模瞬变抗扰度：100 kV/μs\n\n• 对辐射和传导噪声的高抗干扰能力\n\n• 低传播延迟\n• 13 ns（最大值，5 V工作电压）\n\n• 15 ns（最大值，1.8 V工作电压）\n\n\n\n\n• 最大保证数据速率：150 Mbps\n\n• 向后兼容性\n• ADuM140E1/ADuM141E1/ADuM142E1与ADuM1400/ADuM1401/ADuM1402引脚兼容\n\n\n\n\n• 低动态功耗\n\n• 1.8 V至5 V电平转换\n\n• 工作温度最高可达：125°C\n\n• 故障安全高或低选项\n\n• 16引脚SOIC封装，符合RoHS标准;

Single-Channel, 16-Bit, Current/Voltage Output DAC, Functional Safety Approved for Unipolar Current Output

文件：2.5186 Mbytes Page：75 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

ZenBlockTM; zener with integrated blocking diode

DESCRIPTION Cavity free cylindrical glass package through ImplotecTM(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. FEATURES • Zener and blocking function in one package • Glass passivated • Low leakage current

POWER TRANSISTORS(10A,60-100V,125W)

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

Silicon epitaxial planar type

文件：47.63 Kbytes Page：2 Pages