带输入禁用和0个反向通道的鲁棒、四通道隔离器

ADuM140是采用ADI公司iCoupler® 技术的4通道数字隔离器。 这些隔离器件将高速CMOS与单芯片空芯变压器技术融为一体，具有优于光耦合器件和其它集成式耦合器等替代器件的出色性能特征。 最大传播延迟为13 ns，脉冲宽度失真小于3 ns。 还具有3 ns的严格通道间匹配。\n\n ADuM140数据通道属于独立式通道，提供多种配置选择，可承受3.75 kVrms的电压额定值（请参见“订购指南”）。 这些器件均可采用1.8 V至5 V电源电压工作，与低压系统兼容，并且能够跨越隔离栅实现电压转换功能。\n\n 与其它光耦合器不同，可确保不存在输入逻辑转换时的直流正确 • 高共模瞬变抗扰度：100 kV/μs\n\n• 对辐射和传导噪声的高抗干扰能力\n\n• 低传播延迟\n• 13 ns（最大值，5 V工作电压）\n\n• 15 ns（最大值，1.8 V工作电压）\n\n\n\n\n• 最大保证数据速率：150 Mbps\n\n• 向后兼容性\n• ADuM140E1/ADuM141E1/ADuM142E1与ADuM1400/ADuM1401/ADuM1402引脚兼容\n\n\n\n\n• 低动态功耗\n\n• 1.8 V至5 V电平转换\n\n• 工作温度最高可达：125°C\n\n• 故障安全高或低选项\n\n• 16引脚SOIC封装，符合RoHS标准;

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

3.0 kV RMS/3.75 kV RMS Quad Digital Isolators

文件：693.33 Kbytes Page：27 Pages

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP