带输入禁用和1个反向通道的鲁棒、三通道隔离器

The ADuM130D/ADuM130E/ADuM131D/ADuM131E是采用ADI公司iCoupler®技术的三通道数字隔离器。这些隔离器件将高速、互补金属氧化物半导体(CMOS)与单芯片空芯变压器技术融为一体，具有优于光耦合器件和其它集成式耦合器等替代器件的出色性能特征。 这些器件的最大传播延迟为13 ns，在5 V下脉冲宽度失真小于3 ns。 具有严格的3.0 ns（最大值）通道匹配。 \n\n ADuM130D/ADuM130E/ADuM131D/ADuM131E数据通道属于独立式通道，提供多种配置选择，可承受3.75 kV rms的电压额定值（请参见“订购指南”）。 • 高共模瞬变抗扰度： 100 kV/µs \n\n• 对辐射和传导噪声的高抗干扰能力 \n\n• 低传播延迟\n• 13 ns（最大值，5 V工作电压）\n\n• 15 ns（最大值，1.8 V工作电压）\n\n\n\n\n• 最大保证数据速率：150 Mbps \n\n• 向后兼容性 ADuM130E1/ADuM131E1与ADuM1300/ADUM1301引脚兼容 \n\n• 低动态功耗\n\n• 1.8 V至5 V电平转换 \n\n• 工作温度最高可达： 125°C \n\n• 故障安全高或低选项 \n\n• 符合RoHS标准的16引脚SOIC封装\n\n• 欲了解更多信息，请参考数据;

3.0 kV RMS/3.75 kV RMS Triple-Channel Digital Isolators

文件：649.35 Kbytes Page：22 Pages

3.0 kV RMS/3.75 kV RMS Triple-Channel Digital Isolators

文件：649.35 Kbytes Page：22 Pages

3.0 kV RMS/3.75 kV RMS Triple-Channel Digital Isolators

文件：649.35 Kbytes Page：22 Pages

3.0 kV RMS/3.75 kV RMS Triple-Channel Digital Isolators

文件：649.35 Kbytes Page：22 Pages

3.0 kV RMS/3.75 kV RMS Triple-Channel Digital Isolators

文件：649.35 Kbytes Page：22 Pages

3.0 kV RMS/3.75 kV RMS Triple-Channel Digital Isolators

文件：649.35 Kbytes Page：22 Pages

3.0 kV RMS/3.75 kV RMS Triple-Channel Digital Isolators

文件：649.35 Kbytes Page：22 Pages

3.0 kV RMS/3.75 kV RMS Triple-Channel Digital Isolators

文件：649.35 Kbytes Page：22 Pages

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us