丝印代码：ADS821U；10-Bit, 40MHz Sampling ANALOG-TO-DIGITAL CONVERTER

FEATURES NO MISSING CODES INTERNAL REFERENCE LOW POWER: 380mW HIGH SNR: 58dB INTERNAL TRACK-AND-HOLD APPLICATIONS VIDEO DIGITIZING ULTRASOUND IMAGING GAMMA CAMERAS SET-TOP BOXES CABLE MODEMS CCD IMAGING Color Copiers Scanners Camcorders Security Cameras Fax Machines IF AND BASE

丝印代码：ADS821U；10-Bit, 40MHz Sampling ANALOG-TO-DIGITAL CONVERTER

FEATURES NO MISSING CODES INTERNAL REFERENCE LOW POWER: 380mW HIGH SNR: 58dB INTERNAL TRACK-AND-HOLD APPLICATIONS VIDEO DIGITIZING ULTRASOUND IMAGING GAMMA CAMERAS SET-TOP BOXES CABLE MODEMS CCD IMAGING Color Copiers Scanners Camcorders Security Cameras Fax Machines IF AND BASE

ANALOG-TO-DIGITAL CONVERTER

文件：419.8 Kbytes Page：20 Pages

10-Bit, 40MHz Sampling ANALOG-TO-DIGITAL CONVERTER

文件：312.52 Kbytes Page：18 Pages

封装/外壳：28-SOIC（0.295"，7.50mm 宽） 包装：管件 描述：IC ADC 10BIT PIPELINED 28SOIC 集成电路（IC） 模数转换器（ADC）

10-Bit, 40MHz Sampling ANALOG-TO-DIGITAL CONVERTER

FEATURES NO MISSING CODES INTERNAL REFERENCE LOW POWER: 380mW HIGH SNR: 58dB INTERNAL TRACK-AND-HOLD APPLICATIONS VIDEO DIGITIZING ULTRASOUND IMAGING GAMMA CAMERAS SET-TOP BOXES CABLE MODEMS CCD IMAGING Color Copiers Scanners Camcorders Security Cameras Fax Machines IF AND BASE

ANALOG-TO-DIGITAL CONVERTER

文件：419.8 Kbytes Page：20 Pages

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

Integrated Circuit TV Chroma Demodulator

Description: Specifically designed to match advances in color picture tube phosphors, the NTE821 is a monolithic silicon integrated circuit in a 14–Lead DIP type package and consists of three output amplifiers, a new resistor matrix, two double–balanced chroma demodulators, and a very stable bias

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps

文件：1.06883 Mbytes Page：24 Pages