Low Power, Precision Reference and Op Amp

GENERAL DESCRIPTION The ADR821/ADR827 combines a precision voltage reference and an op amp in a 10-lead mini small outline package (MSOP). The reference and the op amp can be operated independently, offering the user a range of flexibility when arranging the combination. Featuring a combined oper

2.5 V低功耗、精密基准电压源和运算放大器

ADR821/ADR827集精密基准电压源与运算放大器于一体，采用10引脚超小型封装(MSOP)。基准电压源和运算放大器均可以独立工作，用户可以灵活地组合配置。总工作电流小于400 µA，基准电压源的温度系数为15 ppm/°C，因此ADR82x非常适合要求高精度、低功耗的应用。\n\nADR82x提供1.25 V和2.5 V两种基准电压，同时分为两种等级。A级基准电压源提供30 ppm/°C的温度漂移性能，初始精度为±0.4%。B级基准电压源的温度漂移性能更高(15 ppm/°C)，初始精度达±0.2%。所有型号产品的工作温度范围均为−40°C至+125°C。\n\n应用\n • 10引脚MSOP封装\n• 工作电压：±2.7 V至±15 V\n• 电源电流：400 μA\n• 基准电压源\n• 温度范围：−40°C至+125°C\n• 片上精密电阻\n• 放大器\n轨到轨输入和输出\n失调电压：100 µV（典型值，±15 V）\n偏置电流：50 nA\n单位增益稳定\n无反相;

Low Power, Precision Reference and Op Amp

文件：612.69 Kbytes Page：20 Pages

Low Power, Precision Reference and Op Amp

GENERAL DESCRIPTION The ADR821/ADR827 combines a precision voltage reference and an op amp in a 10-lead mini small outline package (MSOP). The reference and the op amp can be operated independently, offering the user a range of flexibility when arranging the combination. Featuring a combined oper

Low Power, Precision Reference and Op Amp

GENERAL DESCRIPTION The ADR821/ADR827 combines a precision voltage reference and an op amp in a 10-lead mini small outline package (MSOP). The reference and the op amp can be operated independently, offering the user a range of flexibility when arranging the combination. Featuring a combined oper

Low Power, Precision Reference and Op Amp

GENERAL DESCRIPTION The ADR821/ADR827 combines a precision voltage reference and an op amp in a 10-lead mini small outline package (MSOP). The reference and the op amp can be operated independently, offering the user a range of flexibility when arranging the combination. Featuring a combined oper

Low Power, Precision Reference and Op Amp

GENERAL DESCRIPTION The ADR821/ADR827 combines a precision voltage reference and an op amp in a 10-lead mini small outline package (MSOP). The reference and the op amp can be operated independently, offering the user a range of flexibility when arranging the combination. Featuring a combined oper

Low Power, Precision Reference and Op Amp

GENERAL DESCRIPTION The ADR821/ADR827 combines a precision voltage reference and an op amp in a 10-lead mini small outline package (MSOP). The reference and the op amp can be operated independently, offering the user a range of flexibility when arranging the combination. Featuring a combined oper

Low Power, Precision Reference and Op Amp

GENERAL DESCRIPTION The ADR821/ADR827 combines a precision voltage reference and an op amp in a 10-lead mini small outline package (MSOP). The reference and the op amp can be operated independently, offering the user a range of flexibility when arranging the combination. Featuring a combined oper

Low Power, Precision Reference and Op Amp

文件：612.69 Kbytes Page：20 Pages

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

Integrated Circuit TV Chroma Demodulator

Description: Specifically designed to match advances in color picture tube phosphors, the NTE821 is a monolithic silicon integrated circuit in a 14–Lead DIP type package and consists of three output amplifiers, a new resistor matrix, two double–balanced chroma demodulators, and a very stable bias

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps

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