Ultraprecision, Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET짰 Voltage References

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封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC VREF SERIES 0.13% 8SOIC 集成电路（IC） 电压基准

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.13% 8SOIC 集成电路（IC） 电压基准

Ultraprecision, Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET짰 Voltage References

文件：392.23 Kbytes Page：24 Pages

AM band-switching diode

DESCRIPTION Planar band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω. APPLICATION • Band switch

AM band-switching diode

DESCRIPTION Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

POWER TRANSISTOR NPN SILICON

High-Voltage NPN Silicon Transistor . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc • Gain Specified to 3.5 Amp • High Frequency Response to 2.5 MHz