Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References

GENERAL DESCRIPTION The ADR42x are a series of ultraprecision, second generation eXtra implanted junction FET (XFET) voltage references featuring low noise, high accuracy, and excellent long-term stability in SOIC and MSOP footprints. FEATURES Low noise (0.1 Hz to 10 Hz) ADR42

Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References

GENERAL DESCRIPTION The ADR42x are a series of ultraprecision, second generation eXtra implanted junction FET (XFET) voltage references featuring low noise, high accuracy, and excellent long-term stability in SOIC and MSOP footprints. FEATURES Low noise (0.1 Hz to 10 Hz) ADR42

Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References

GENERAL DESCRIPTION The ADR42x are a series of ultraprecision, second generation eXtra implanted junction FET (XFET) voltage references featuring low noise, high accuracy, and excellent long-term stability in SOIC and MSOP footprints. FEATURES Low noise (0.1 Hz to 10 Hz) ADR42

Ultraprecision, Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET짰 Voltage References

文件：392.23 Kbytes Page：24 Pages

Ultraprecision, Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET짰 Voltage References

文件：392.23 Kbytes Page：24 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.15% 8MSOP 集成电路（IC） 电压基准

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC VREF SERIES 0.15% 8SOIC 集成电路（IC） 电压基准

Ultraprecision, Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET짰 Voltage References

文件：392.23 Kbytes Page：24 Pages

Ultraprecision, Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET짰 Voltage References

文件：392.23 Kbytes Page：24 Pages

SURFACE MOUNT FUSES

Features • Heat resistant ceramic housing • For line or low voltage applications • Low voltage drop • Internationally approved • High pulse resistance • Also available as holder system 425 with mounted fuse 420

NPN Silicon RF Transistor

DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It reaches perform

420 LED wire-to-board connector

文件：307.61 Kbytes Page：1 Pages

Supporting the Intel Celeron processor

文件：1.3709 Mbytes Page：100 Pages

Celeron M Processor on 65 nm Process

文件：1.93023 Mbytes Page：71 Pages