ADR291价格

参考价格:¥45.3571

型号:ADR291ERZ 品牌:Analog 备注:这里有ADR291多少钱,2024年最近7天走势,今日出价,今日竞价,ADR291批发/采购报价,ADR291行情走势销售排行榜,ADR291报价。
型号 功能描述 生产厂家&企业 LOGO 操作
ADR291

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291

Precision,Micropower,HighCurrentOutputVoltageReference

GENERALDESCRIPTION TheADR3625isalowpower,highprecisionvoltagereferencethat featuresamaximumtemperaturecoefficientof3ppm/°CfortheB gradeinan8-leadMSOP.Capableofsourcingupto 70mA,theADR3625isanexceptionalreplacementtostandard lowdropout(LDO)regulators.

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291

Precision,Micropower,HighCurrentOutputVoltageReferences

GENERALDESCRIPTION TheADR3625ADR3630ADR3650arelowpower,highprecision voltagereferencesthatfeatureamaximumtemperaturecoefficient of3ppm/°CfortheBgradeinan8-leadMSOP.Capableof sourcingupto70mA,theADR3625ADR3630ADR3650arean exceptionalreplacementtostandardlo

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

文件:348.48 Kbytes Page:20 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADR291

UltralowNoise,HighAccuracy

文件:993.6 Kbytes Page:32 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropowerPrecisionVoltageReferences

GENERALDESCRIPTION TheADR290,ADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET™referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandZener-basedreferences.Improvementsinclude:onequarte

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

GENERALDESCRIPTION TheADR291andADR292arelownoise,micropowerprecisionvoltagereferencesthatuseanXFET®referencecircuit.ThenewXFETarchitectureofferssignificantperformanceimprovementsovertraditionalbandgapandburiedZener-basedreferences.Improvementsincludeonequart

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

LowNoiseMicropower2.5Vand4.096VPrecisionVoltageReferences

文件:348.48 Kbytes Page:20 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC VREF SERIES 0.08% 8SOIC 集成电路(IC) 电压基准

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC VREF SERIES 0.12% 8SOIC 集成电路(IC) 电压基准

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

CylindricalCase,High-CurrentandHigh-VoltageCircuits

Designedforfrequenciesrangingfrom100kHzto3MHz, MicaCapacitorTypes291,292,293and294arewellsuited forhigh-currentandhigh-voltagecircuitslikeradiotransmitters. Castincylindricalcases,thesecapacitorsareelectrically equivalenttoMIL-C-5StylesCM75throughCM93 in

CDE

Cornell Dubilier Electronics

CDE

PLUGGABLESERIES

文件:310.48 Kbytes Page:1 Pages

DBLECTRODB Lectro Inc

迪贝电子迪贝电子(上海)有限公司

DBLECTRO

SMDAirWoundCoils

文件:66.33 Kbytes Page:2 Pages

FRONTIER

Frontier Electronics

FRONTIER

TapeandReelSpecifications

文件:121.78 Kbytes Page:5 Pages

FRONTIER

Frontier Electronics

FRONTIER

EnclosurescanbeFactoryModified(Milling,Drilling,Printingetc.)

文件:331.11 Kbytes Page:1 Pages

HAMMOND

Hammond Manufacturing Ltd.

HAMMOND

ADR291产品属性

  • 类型

    描述

  • 型号

    ADR291

  • 制造商

    AD

  • 制造商全称

    Analog Devices

  • 功能描述

    Low Noise Micropower Precision Voltage References

更新时间:2024-5-11 10:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ADI(亚德诺)
23+
TSSOP-8
1612
特价优势库存质量保证稳定供货
13384
QFP
7
美国德州仪器TEXASINSTRUMENTS原厂代理辉华拓展内地现
ADI(亚德诺)
23+
标准封装
9163
我们只是原厂的搬运工
ADI
2016+
SOP8
3045
ADI/亚德诺
22++
SOP8
5209
原装正品!诚信经营,实单价优!
ADI/亚德诺
22+
TSSOP8
9600
原装现货,优势供应,支持实单!
ADI/亚德诺
23+
NA
11360
ADI优势主营型号-原装正品
ADI
1912+
16850
绝对原装现货
ADI(亚德诺)
SOIC-8
6000
原装现货长期供货账期支持
ADI/亚德诺
22+
SOP8
4000

ADR291芯片相关品牌

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  • Vectron
  • Winchester

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