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ADG918价格
参考价格:¥11.7152
型号:ADG918BCPZ-500RL7 品牌:Analog 备注:这里有ADG918多少钱,2026年最近7天走势,今日出价,今日竞价,ADG918批发/采购报价,ADG918行情走势销售排行榜,ADG918报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ADG918 | Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed such th | AD 亚德诺 | ||
ADG918 | Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc | AD 亚德诺 | ||
ADG918 | 宽带、43 dB隔离(1 GHz)、CMOS 1.65 V至2.75 V、2:1 Mux/SPDT开关 ADG918/ADG919是采用CMOS工艺制成、具有高隔离和低插入损耗特点并且频率达1 GHz的宽带开关。 ADG918是一款具有50 Ω端接分流引脚的吸收式(匹配)开关,而ADG919则是一款反射式开关。 这些器件设计为在DC至1 GHz频率范围内具有高隔离特性。 它们集成了片内CMOS控制逻辑,从而无需外部控制电路。 控制输入均兼容CMOS和LVTTL。 这些CMOS器件具有低功耗特性,使其非常适合无线和通用高频开关应用。\n\n产品聚焦 \n\n −43 dB关断隔离(1 GHz)。 0.8 dB插入损耗(1 GHz)。 小型8引脚MSOP/LFCSP封装。 应用 • 宽带开关: -3 dB(4 GHz时) \n\n• 吸收式/反射式开关 \n\n• 高关断隔离:43 dB(1 GHz时)\n\n• 低插入损耗:0.8 dB(1 GHz时)\n\n• 1.65 V至2.75 V单电源供电\n\n• CMOS/LVTTL控制逻辑 \n\n• 8引脚MSOP和小型3 mm x 3 mm LFCSP封装\n\n• 低功耗(<1 µA); | AD 亚德诺 | ||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc | AD 亚德诺 | |||
Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed such th | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc | AD 亚德诺 | |||
Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed such th | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT 文件:570.61 Kbytes Page:16 Pages | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT 文件:570.61 Kbytes Page:16 Pages | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT 文件:570.61 Kbytes Page:16 Pages | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT 文件:570.61 Kbytes Page:16 Pages | AD 亚德诺 | |||
封装/外壳:8-WFDFN 裸露焊盘,CSP 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC RF SWITCH SPDT 2GHZ 8LFCSP RF/IF,射频/中频和 RFID 射频开关 | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT 文件:570.61 Kbytes Page:16 Pages | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT 文件:570.61 Kbytes Page:16 Pages | AD 亚德诺 | |||
封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 包装:散装 描述:IC RF SWITCH SPDT 2GHZ 8MSOP RF/IF,射频/中频和 RFID 射频开关 | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT 文件:570.61 Kbytes Page:16 Pages | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT 文件:570.61 Kbytes Page:16 Pages | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT 文件:570.61 Kbytes Page:16 Pages | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT 文件:570.61 Kbytes Page:16 Pages | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT 文件:570.61 Kbytes Page:16 Pages | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT 文件:570.61 Kbytes Page:16 Pages | AD 亚德诺 | |||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT 文件:570.61 Kbytes Page:16 Pages | AD 亚德诺 | |||
丝印代码:3B;NPN SILICON PLANAR VHF/UHF TRANSISTOR NPN SILICON PLANAR VHF/UHF TRANSISTOR | ZETEX | |||
Amplifier Transistors Amplifier Transistors NPN Silicon | MOTOROLA 摩托罗拉 | |||
Integrated Circuit High Speed Operational Amplifier Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external | NTE | |||
Integrated Circuit High Speed Operational Amplifier Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external | NTE | |||
Integrated Circuit High Speed Operational Amplifier Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external | NTE |
ADG918产品属性
- 类型
描述
- 型号
ADG918
- 制造商
AD
- 制造商全称
Analog Devices
- 功能描述
Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V,
- 2
1 Mux/SPDT Switches
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ADI(亚德诺) |
25+ |
MSOP-8 |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ADI |
24+ |
MSOP8 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ADI |
2447+ |
LFCSP8 |
9657 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ADI |
26+ |
MSOP |
8000 |
原装现货 极速发货 一站式电子元器件BOM配单 |
|||
ADI |
23+ |
MSOP-8 |
16000 |
英博尔原装优质现货订货渠道商 |
|||
ADI(亚德诺) |
25+ |
标准封装 |
9663 |
我们只是原厂的搬运工 |
|||
ADI/亚德诺 |
2025+ |
MSOP |
5000 |
原装进口价格优 请找坤融电子! |
|||
ADI |
24+ |
LFCSP |
2130 |
进口原装现货/假一罚十 |
|||
AD |
14+ |
LFCSP |
9960 |
大量原装进口现货,一手货源,一站式服务,可开17%增 |
|||
ADI/亚德诺 |
24+ |
MSOP8 |
9600 |
原装现货,优势供应,支持实单! |
ADG918规格书下载地址
ADG918参数引脚图相关
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- ADG849YKSZ-REEL
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AD7887ARM ADI 19+ 5000 AD8495ARMZ-R7 ADI 19+ 5000 AD8512ARMZ ADI 19+ 5000 AD7303BRMZ ADI 19+ 5000 AD8675ARMZ-REEL ADI 19+ 5000 AD8314ARMZ ADI 19+ 5000 AD8692ARMZ ADI 19+ 5000 AD5290YRMZ10 ADI 19+ 5000 AD5310RBRMZ ADI 19+ 5000 AD8250ARMZ ADI 19+ 5000 AD8418BRMZ ADI 19+ 5000 HMC270AMS8GETR
2019-8-7
DdatasheetPDF页码索引
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