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ADG918价格

参考价格:¥11.7152

型号:ADG918BCPZ-500RL7 品牌:Analog 备注:这里有ADG918多少钱,2026年最近7天走势,今日出价,今日竞价,ADG918批发/采购报价,ADG918行情走势销售排行榜,ADG918报价。
型号 功能描述 生产厂家 企业 LOGO 操作
ADG918

Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed such th

AD

亚德诺

ADG918

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

AD

亚德诺

ADG918

宽带、43 dB隔离(1 GHz)、CMOS 1.65 V至2.75 V、2:1 Mux/SPDT开关

ADG918/ADG919是采用CMOS工艺制成、具有高隔离和低插入损耗特点并且频率达1 GHz的宽带开关。 ADG918是一款具有50 Ω端接分流引脚的吸收式(匹配)开关,而ADG919则是一款反射式开关。 这些器件设计为在DC至1 GHz频率范围内具有高隔离特性。 它们集成了片内CMOS控制逻辑,从而无需外部控制电路。 控制输入均兼容CMOS和LVTTL。 这些CMOS器件具有低功耗特性,使其非常适合无线和通用高频开关应用。\n\n产品聚焦 \n\n −43 dB关断隔离(1 GHz)。 0.8 dB插入损耗(1 GHz)。 小型8引脚MSOP/LFCSP封装。 应用 • 宽带开关: -3 dB(4 GHz时) \n\n• 吸收式/反射式开关 \n\n• 高关断隔离:43 dB(1 GHz时)\n\n• 低插入损耗:0.8 dB(1 GHz时)\n\n• 1.65 V至2.75 V单电源供电\n\n• CMOS/LVTTL控制逻辑 \n\n• 8引脚MSOP和小型3 mm x 3 mm LFCSP封装\n\n• 低功耗(<1 µA);

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

AD

亚德诺

Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed such th

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

AD

亚德诺

Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed such th

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件:570.61 Kbytes Page:16 Pages

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件:570.61 Kbytes Page:16 Pages

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件:570.61 Kbytes Page:16 Pages

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件:570.61 Kbytes Page:16 Pages

AD

亚德诺

封装/外壳:8-WFDFN 裸露焊盘,CSP 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC RF SWITCH SPDT 2GHZ 8LFCSP RF/IF,射频/中频和 RFID 射频开关

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件:570.61 Kbytes Page:16 Pages

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件:570.61 Kbytes Page:16 Pages

AD

亚德诺

封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 包装:散装 描述:IC RF SWITCH SPDT 2GHZ 8MSOP RF/IF,射频/中频和 RFID 射频开关

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件:570.61 Kbytes Page:16 Pages

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件:570.61 Kbytes Page:16 Pages

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件:570.61 Kbytes Page:16 Pages

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件:570.61 Kbytes Page:16 Pages

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件:570.61 Kbytes Page:16 Pages

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件:570.61 Kbytes Page:16 Pages

AD

亚德诺

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件:570.61 Kbytes Page:16 Pages

AD

亚德诺

丝印代码:3B;NPN SILICON PLANAR VHF/UHF TRANSISTOR

NPN SILICON PLANAR VHF/UHF TRANSISTOR

ZETEX

Amplifier Transistors

Amplifier Transistors NPN Silicon

MOTOROLA

摩托罗拉

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

NTE

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

NTE

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

NTE

ADG918产品属性

  • 类型

    描述

  • 型号

    ADG918

  • 制造商

    AD

  • 制造商全称

    Analog Devices

  • 功能描述

    Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V,

  • 2

    1 Mux/SPDT Switches

更新时间:2026-8-1 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ADI(亚德诺)
25+
MSOP-8
18798
原装正品现货,原厂订货,可支持含税原型号开票。
ADI
24+
MSOP8
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
ADI
2447+
LFCSP8
9657
只做原装正品假一赔十为客户做到零风险!!
ADI
26+
MSOP
8000
原装现货 极速发货 一站式电子元器件BOM配单
ADI
23+
MSOP-8
16000
英博尔原装优质现货订货渠道商
ADI(亚德诺)
25+
标准封装
9663
我们只是原厂的搬运工
ADI/亚德诺
2025+
MSOP
5000
原装进口价格优 请找坤融电子!
ADI
24+
LFCSP
2130
进口原装现货/假一罚十
AD
14+
LFCSP
9960
大量原装进口现货,一手货源,一站式服务,可开17%增
ADI/亚德诺
24+
MSOP8
9600
原装现货,优势供应,支持实单!

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