Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed such th

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件：570.61 Kbytes Page：16 Pages

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件：570.61 Kbytes Page：16 Pages

封装/外壳：8-WFDFN 裸露焊盘，CSP 包装：托盘 描述：IC RF SWITCH SPDT 2GHZ 8LFCSP RF/IF，射频/中频和 RFID 射频开关

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件：570.61 Kbytes Page：16 Pages

封装/外壳：8-WFDFN 裸露焊盘，CSP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SPDT 2GHZ 8LFCSP RF/IF，射频/中频和 RFID 射频开关

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

文件：570.61 Kbytes Page：16 Pages

丝印代码：3B；NPN SILICON PLANAR VHF/UHF TRANSISTOR

NPN SILICON PLANAR VHF/UHF TRANSISTOR

Amplifier Transistors

Amplifier Transistors NPN Silicon

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external