Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

GENERAL DESCRIPTION The ADG901/ADG902 are wideband switches that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 Ω terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such tha

0 Hz to 4.5 GHz, 40 dB Off Isolation at 1 GHz, 17 dBm P1dB at 1 GHz SPST Switches

FEATURES ADG901 absorptive switch ADG902 reflective switch Enables user to pass dc signals up to 0.5 V without dc blocking capacitor Operational from 0 Hz up to 4.5 GHz at −3 dB frequency 40 dB off isolation at 1 GHz typical 0.8 dB insertion loss at 1 GHz typical 17 dBm P1dB at 1 GHz typical A

0 Hz至4.5 GHz、40 dB关断隔离(1 GHz)、17 dBm P1dB (1 GHz) SPST开关

ADG901/ADG902是采用互补金属氧化物半导体(CMOS)工艺制成、具有高隔离和低插入损耗特点并且频率达1 GHz的宽带开关。ADG901是一款具有50 Ω端接分流引脚的吸收式（匹配）开关，而ADG902则是一款反射式开关。这些器件设计为在DC至1 GHz频率范围内具有高隔离特性。这些开关允许用户传递高达0.5 V的直流信号，无需使用隔直电容。它们集成了板载CMOS控制逻辑，从而无需外部控制电路。控制输入均兼容CMOS和LVTTL。这些CMOS器件具有低功耗特性，使其非常适合无线应用和通用高频开关。\n\n产品聚焦 1.40 dB Off Isolation at 1 GHz • 反射式开关\n\n• 允许用户传递高达0.5 V的直流信号，无需使用隔直电容\n\n• 工作频率范围：0 Hz至4.5 GHz (−3 dB)\n40 dB关断隔离（典型值，1 GHz）\n0.8 dB插入损耗（典型值，1 GHz）\n17 dBm P1dB（典型值，1 GHz）\n\n• •提供3 mm × 3 mm、8引脚MSOP和8引脚LFCSP封装;

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

GENERAL DESCRIPTION The ADG901/ADG902 are wideband switches that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 Ω terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such tha

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

GENERAL DESCRIPTION The ADG901/ADG902 are wideband switches that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 Ω terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such tha

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

GENERAL DESCRIPTION The ADG901/ADG902 are wideband switches that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 Ω terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such tha

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

GENERAL DESCRIPTION The ADG901/ADG902 are wideband switches that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 Ω terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such tha

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

GENERAL DESCRIPTION The ADG901/ADG902 are wideband switches that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 Ω terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such tha

丝印代码：MSOP；0 Hz to 4.5 GHz, 40 dB Off Isolation at 1 GHz, 17 dBm P1dB at 1 GHz SPST Switches

FEATURES ADG901 absorptive switch ADG902 reflective switch Enables user to pass dc signals up to 0.5 V without dc blocking capacitor Operational from 0 Hz up to 4.5 GHz at −3 dB frequency 40 dB off isolation at 1 GHz typical 0.8 dB insertion loss at 1 GHz typical 17 dBm P1dB at 1 GHz typical A

1.65 V to 2.75 V, SPST Switches

文件：875.49 Kbytes Page：17 Pages

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：散装 描述：IC RF SWITCH SPST 2.5GHZ 8MSOP RF/IF，射频/中频和 RFID 射频开关

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：散装 描述：IC RF SWITCH SPST 2.5GHZ 8MSOP RF/IF，射频/中频和 RFID 射频开关

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A

CATV amplifier modules

General description Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V. Features ■ Excellent linearity ■ Extremely low noise ■ Excellent return loss properties ■ Silicon nitride passivation ■ Rugged construction ■ Gold metallization ensures excellent relia

CATV amplifier module

DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V. FEATURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability

Integrated Circuit Operational Transconductance Amplifier

Description: The NTE902 has a differential input and a single–ended, push–pull, class A output. In addition there is a bias input for linear gain control, whose transconductance (gm) is directly proportional to the amplifier bias current (IABC). Features: • Slew rate (unity gain, compensated):

RAIL TO RAIL CMOS DUAL OPERATIONAL AMPLIFIER WITH STANDBY POSITION

DESCRIPTION The TS902 is a RAIL TO RAIL dual CMOS operational amplifier designed to operate with single or dual supply voltage. ■ RAIL TO RAIL INPUT AND OUTPUT VOLTAGE RANGES ■ STANDBY POSITION : REDUCED CONSUMPTION (0.5µA) AND HIGH IMPEDANCE OUTPUTS ■ SINGLE (OR DUAL) SUPPLY OP