Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

GENERAL DESCRIPTION The ADG901/ADG902 are wideband switches that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 Ω terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such tha

0 Hz to 4.5 GHz, 40 dB Off Isolation at 1 GHz, 17 dBm P1dB at 1 GHz SPST Switches

FEATURES ADG901 absorptive switch ADG902 reflective switch Enables user to pass dc signals up to 0.5 V without dc blocking capacitor Operational from 0 Hz up to 4.5 GHz at −3 dB frequency 40 dB off isolation at 1 GHz typical 0.8 dB insertion loss at 1 GHz typical 17 dBm P1dB at 1 GHz typical A

宽带、43 dB隔离(1 GHz)、CMOS 1.65 V至2.75 V、吸收式/反射式开关

0 Hz to 4.5 GHz, 40 dB Off Isolation at 1 GHz, 17 dBm P1dB at 1 GHz SPST Switches

FEATURES ADG901 absorptive switch ADG902 reflective switch Enables user to pass dc signals up to 0.5 V without dc blocking capacitor Operational from 0 Hz up to 4.5 GHz at −3 dB frequency 40 dB off isolation at 1 GHz typical 0.8 dB insertion loss at 1 GHz typical 17 dBm P1dB at 1 GHz typical A

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

GENERAL DESCRIPTION The ADG901/ADG902 are wideband switches that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 Ω terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such tha

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

GENERAL DESCRIPTION The ADG901/ADG902 are wideband switches that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 Ω terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such tha

丝印代码：LFCSP；0 Hz to 4.5 GHz, 40 dB Off Isolation at 1 GHz, 17 dBm P1dB at 1 GHz SPST Switches

FEATURES ADG901 absorptive switch ADG902 reflective switch Enables user to pass dc signals up to 0.5 V without dc blocking capacitor Operational from 0 Hz up to 4.5 GHz at −3 dB frequency 40 dB off isolation at 1 GHz typical 0.8 dB insertion loss at 1 GHz typical 17 dBm P1dB at 1 GHz typical A

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

GENERAL DESCRIPTION The ADG901/ADG902 are wideband switches that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 Ω terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such tha

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

GENERAL DESCRIPTION The ADG901/ADG902 are wideband switches that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 Ω terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such tha

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

GENERAL DESCRIPTION The ADG901/ADG902 are wideband switches that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 Ω terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such tha

丝印代码：MSOP；0 Hz to 4.5 GHz, 40 dB Off Isolation at 1 GHz, 17 dBm P1dB at 1 GHz SPST Switches

FEATURES ADG901 absorptive switch ADG902 reflective switch Enables user to pass dc signals up to 0.5 V without dc blocking capacitor Operational from 0 Hz up to 4.5 GHz at −3 dB frequency 40 dB off isolation at 1 GHz typical 0.8 dB insertion loss at 1 GHz typical 17 dBm P1dB at 1 GHz typical A

丝印代码：MSOP；0 Hz to 4.5 GHz, 40 dB Off Isolation at 1 GHz, 17 dBm P1dB at 1 GHz SPST Switches

FEATURES ADG901 absorptive switch ADG902 reflective switch Enables user to pass dc signals up to 0.5 V without dc blocking capacitor Operational from 0 Hz up to 4.5 GHz at −3 dB frequency 40 dB off isolation at 1 GHz typical 0.8 dB insertion loss at 1 GHz typical 17 dBm P1dB at 1 GHz typical A

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

1.65 V to 2.75 V, SPST Switches

文件：875.49 Kbytes Page：17 Pages

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

封装/外壳：8-WFDFN 裸露焊盘，CSP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SPST 2.5GHZ 8LFCSP RF/IF，射频/中频和 RFID 射频开关

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：散装 描述：IC RF SWITCH SPST 2.5GHZ 8MSOP RF/IF，射频/中频和 RFID 射频开关

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches

文件：737.9 Kbytes Page：16 Pages

Low power consumption

文件：576.18 Kbytes Page：11 Pages

VHF variable capacitance diode

DESCRIPTION The BB901 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOT23 small plastic SMD package. FEATURES • Excellent linearity • Small plastic SMD package • C28: 1 pF; ratio: 13.5 APPLICATIONS • Electronic tuning in satellite tuners • Tunabl

Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol

Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol

17 dB 40-860 MHz VHF/UHF CATV/MATV AMPLIFIERS

The RF Line VHF/UHF CATV Amplifiers . . . designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion–implanted arsenic emitter transistors and an all gold metal system. • Specified C

5.0 mm Blue Series

文件：30.4 Kbytes Page：1 Pages