0.8 廓 CMOS, 2.3 V to 5.5 V, SPDT/2:1 Mux Mini LFCSP

GENERAL DESCRIPTION The ADG852 is a low voltage CMOS single-pole, double-throw (SPDT) switch. This device offers ultralow on resistance of less than 1 Ω over the full temperature range. The ADG852 is fully specified for 5.5 V and 3.3 V supply operation. FEATURES 0.8 Ω typical on resistance

0.8 Ω、CMOS、1.8V至5.5V、单刀双掷开关/2:1多路复用器，采用小型LFCSP封装

ADG852是一款低压、CMOS、单刀双掷（SPDT）开关。在整个温度范围内，该器件具有小于1 Ω的超低导通电阻。额定电源电压为5.5 V和3.3 V。\n\n 接通时，各开关在两个方向的导电性能相同，输入信号范围可扩展至电源电压范围。ADG852为先开后合式开关。\n\n 该器件采用1.30 mm x 1.60 mm、10引脚小型LFCSP封装。\n\n产品特色 在整个工作温度范围（−40°C至+85℃）内，导通电阻小于1 Ω 1.8 V至5.5 V单电源供电。 与1.8 V CMOS逻辑兼容。 高电流处理能力：每通道300 mA连续电流。 低总谐波失真加噪声：0. • 导通电阻：0.8 Ω（典型值）\n\n• 最大导通电阻（85°C）：<1 Ω\n\n• 1.8 V至5.5 V单电源供电\n\n• 高载流能力：300 mA连续;

0.8 廓 CMOS, 2.3 V to 5.5 V, SPDT/2:1 Mux Mini LFCSP

GENERAL DESCRIPTION The ADG852 is a low voltage CMOS single-pole, double-throw (SPDT) switch. This device offers ultralow on resistance of less than 1 Ω over the full temperature range. The ADG852 is fully specified for 5.5 V and 3.3 V supply operation. FEATURES 0.8 Ω typical on resistance

0.8 廓 CMOS, 2.3 V to 5.5 V, SPDT/2:1 Mux Mini LFCSP

GENERAL DESCRIPTION The ADG852 is a low voltage CMOS single-pole, double-throw (SPDT) switch. This device offers ultralow on resistance of less than 1 Ω over the full temperature range. The ADG852 is fully specified for 5.5 V and 3.3 V supply operation. FEATURES 0.8 Ω typical on resistance

0.8 廓 CMOS, 2.3 V to 5.5 V, SPDT/2:1 Mux Mini LFCSP

GENERAL DESCRIPTION The ADG852 is a low voltage CMOS single-pole, double-throw (SPDT) switch. This device offers ultralow on resistance of less than 1 Ω over the full temperature range. The ADG852 is fully specified for 5.5 V and 3.3 V supply operation. FEATURES 0.8 Ω typical on resistance

SOFT RECOVERU, FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 50 to 600 Volts CURRENT - 3.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 3.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Void-free molded plastic package • Exceeds environmental standards of MIL-S-19500/228 • Fast switching for high efficiency. • In

FAST RECOVERY RECTIFIER DIODE

DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diode very attractive components for many demanding applications. ■ LOW FORWARD VOLTAGE DROP ■ HIGH SURGE CURRENT CAPABILITY APPLICATIONS ■ AC-DC POWER SUPPLIES AND

FAST RECOVERY RECTIFIER DIODES

DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diodes very attractive components for many demanding applications. ■ LOW FORWARD VOLTAGE DROP ■ HIGH SURGE CURRENT CAPABILITY APPLICATIONS ■ AC-DC POWER SUPPLIES AND

Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

REGULATED GaAs FET BIAS SUPPLY

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