??CMOS 1.8 V to 5.5 V, Dual SPST Switches

GENERAL DESCRIPTION The ADG821/ADG822/ADG823 are monolithic CMOS singlepole, single-throw (SPST) switches. These switches are designed on an advanced submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, and low leakage currents. FEATURES 0

<1 Ω、低压(1.8 V - 5.5 V)、双通道单刀单掷开关（常开）

ADG821、ADG822和ADG823均为单芯片CMOS单刀单掷（SPST）开关，采用先进的亚微米工艺设计，具有低功耗、高开关速度、低导通电阻和低泄漏电流特性。 • 导通电阻：0.8 Ω（最大值，125°C）\n\n• 导通电阻平坦度：0.28 Ω（最大值，125°C）\n\n• 单电源：1.8 V至5.5 V\n\n• 载流能力：200 mA\n\n• 汽车应用温度范围：–40°C至+125°C;

??CMOS 1.8 V to 5.5 V, Dual SPST Switches

GENERAL DESCRIPTION The ADG821/ADG822/ADG823 are monolithic CMOS singlepole, single-throw (SPST) switches. These switches are designed on an advanced submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, and low leakage currents. FEATURES 0

1 ohm CMOS, 1.8V to 5.5V, Dual SPST Switches

GENERAL DESCRIPTION The ADG821/ADG822/ADG823 are monolithic CMOS singlepole, single-throw (SPST) switches. These switches are designed on an advanced submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, and low leakage currents. FEATURES 0

1 ohm CMOS, 1.8V to 5.5V, Dual SPST Switches

GENERAL DESCRIPTION The ADG821/ADG822/ADG823 are monolithic CMOS singlepole, single-throw (SPST) switches. These switches are designed on an advanced submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, and low leakage currents. FEATURES 0

1 ohm CMOS, 1.8V to 5.5V, Dual SPST Switches

GENERAL DESCRIPTION The ADG821/ADG822/ADG823 are monolithic CMOS singlepole, single-throw (SPST) switches. These switches are designed on an advanced submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, and low leakage currents. FEATURES 0

1 ohm CMOS, 1.8V to 5.5V, Dual SPST Switches

GENERAL DESCRIPTION The ADG821/ADG822/ADG823 are monolithic CMOS singlepole, single-throw (SPST) switches. These switches are designed on an advanced submicron process that provides low power dissipation, yet gives high switching speed, low on resistance, and low leakage currents. FEATURES 0

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

Integrated Circuit TV Chroma Demodulator

Description: Specifically designed to match advances in color picture tube phosphors, the NTE821 is a monolithic silicon integrated circuit in a 14–Lead DIP type package and consists of three output amplifiers, a new resistor matrix, two double–balanced chroma demodulators, and a very stable bias

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps

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