CMOS Low Voltage 4 ohm Quad SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS、低压、2.5 Ω、四通道单刀单掷开关

ADG713是一款单芯片CMOS器件，内置四个独立可选的开关。它采用先进的亚微米工艺设计，具有低功耗、高开关速度、低导通电阻、低泄漏电流和高带宽特性。\n\n ADG713采用+1.8 V至+5.5 V单电源供电，非常适合用在电池供电仪表中，以及配合Analog Devices, Inc.（简称ADI）的新一代DAC和ADC使用。同时快速开关时间和高带宽使该器件适合视频信号切换应用。\n\n ADG713有两个开关的数字控制逻辑与ADG711相似，但其它两个开关的控制逻辑则相反。接通时，各开关在两个方向的导电性能相同。该器件为先开后合式开关。\n\n ADG713 • 单电源：1.8 V至5.5 V\n\n• 导通电阻：2.5 Ω（典型值）\n\n• 低导通电阻平坦度\n\n• -3 dB带宽：> 200 MHz;

CMOS Low Voltage 4 ohm Quad SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage 4 ohm Quad SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage

文件：259.779 Kbytes Page：16 Pages

Quad Precision, Low Cost, High Speed, BiFET Op Amp

GENERAL DESCRIPTION The AD713 is a quad operational amplifier, consisting of four AD711 BiFET op amps. These precision monolithic op amps offer excellent dc characteristics plus rapid settling times, high slew rates, and ample bandwidths. FEATURES AC performance 1 μs settling

Quad Precision, Low Cost, High Speed, BiFET Op Amp

GENERAL DESCRIPTION The AD713 is a quad operational amplifier, consisting of four AD711 BiFET op amps. These precision monolithic op amps offer excellent dc characteristics plus rapid settling times, high slew rates, and ample bandwidths. FEATURES AC performance 1 μs settling

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

Integrated Circuit Chroma Demod

Description: The NTE713 is a monolithic integrated circuit in a 14–Lead DIP type package that contains two sets of synchronous detectors with matrix circuits to achieve the R–Y, G–Y, and B–Y color difference output signals. The chroma input signal is applied to Pin3 and Pin4 while the oscillator

LOW DROPOUT REGULATOR

DESCRIPTION TK713xx is a low dropout, linear regulator with a built-in electronic switch. Since a PNP power transistor is used, dropout voltage is very low, making it possible to maintain a stable output voltage even as the battery voltage decreases. This allows longer battery life. The TK713xx