CMOS Low Voltage 4 ohm Quad SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS、低压、2.5 Ω、四通道单刀单掷开关

ADG712是一款单芯片CMOS器件，内置四个独立可选的开关。它采用先进的亚微米工艺设计，具有低功耗、高开关速度、低导通电阻、低泄漏电流和高带宽特性。\n\n ADG712采用+1.8 V至+5.5 V单电源供电，非常适合用在电池供电仪表中，以及配合Analog Devices, Inc.（简称ADI）的新一代DAC和ADC使用。同时快速开关时间和高带宽使该器件适合视频信号切换应用。\n\n 接通时，各开关在两个方向的导电性能相同。ADG712提供16引脚TSSOP和16引脚SOIC两种封装。 • 单电源：1.8 V至5.5 V\n\n• 导通电阻：2.5 Ω（典型值）\n\n• 低导通电阻平坦度\n\n• -3 dB带宽：> 200 MHz;

CMOS Low Voltage 4 ohm Quad SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage 4 ohm Quad SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage 4 ohm Quad SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage, 4 廓 Quad, SPST Switches

GENERAL DESCRIPTION The ADG711, ADG712, and ADG713 are monolithic CMOS devices containing four independently selectable switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage current

CMOS Low Voltage

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Dual Precision, Low Cost, High Speed, BiFET Op Amp

PRODUCT DESCRIPTION The AD712 is a high speed, precision monolithic operational amplifier offering high performance at very modest prices. Its very low offset voltage and offset voltage drift are the results of advanced laser wafer trimming technology. These performance benefits allow the user

COMPLEMENTARY SILICON POWER TRANSISTORS

POWER LINEAR AND SWITCHING APPLICATIONS

CATV amplifier module

DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliabil

Asymmetrical TVS Diode for Extended Common-Mode RS-485

Description The SM712 transient voltage suppressor (TVS) diode is designed for asymmetrical (12V to -7V ) protection in multi-point data transmission standard RS-485 applications. The SM712 may be used to protect devices from transient voltages resulting from electrostatic discharge (ESD), electr

LOW DROPOUT REGULATOR

DESCRIPTION TK712xx is a low dropout, linear regulator. Since a PNP power transistor is used, dropout voltage is very low, making it possible to maintain stable output voltage even as the battery decreases. This allows longer battery life. The TK712xx has a noise bypass pin available for noise re