High Voltage Latch-Up Proof, Quad SPST Switches 0.07 pC charge injection

GENERAL DESCRIPTION The ADG5212/ADG5213 contain four independent single-pole/single-throw (SPST) switches. The ADG5212 switches turn on with Logic 1. The ADG5213 has two switches with digital control logic similar to that of the ADG5212; however, the logic is inverted on the other two switches. E

高压防闩锁型四通道SPST开关

ADG5212/ADG5213内置四个独立的单刀单掷(SPST)开关。ADG5212开关的导通条件是相关控制输入为逻辑1。ADG5213有两个开关的数字控制逻辑与ADG5212相似，其它两个开关的控制逻辑则相反。当导通时，各开关在两个方向的导电性能相同，输入信号范围可扩展至电源电压范围。在断开条件下，等于电源电压的信号电平被阻止。\n\n ADG5212和ADG5213没有VL引脚。在整个工作电压范围内，数字输入与3 V逻辑输入兼容。\n\n 这些开关具有超低电容和电荷注入特性，因而是要求低突波和快速建立时间的数据采集与采样保持应用的理想解决方案。较快的开关速度及高信号带宽 • 无闩锁现象\n\n• 3 pF关断电容\n\n• 5 pF关断漏极电容\n\n• 0.07 pC电荷注入\n\n• 低泄漏：0.2 nA（85ºC，最大值）;

High Voltage Latch-Up Proof, Quad SPST Switches 0.07 pC charge injection

GENERAL DESCRIPTION The ADG5212/ADG5213 contain four independent single-pole/single-throw (SPST) switches. The ADG5212 switches turn on with Logic 1. The ADG5213 has two switches with digital control logic similar to that of the ADG5212; however, the logic is inverted on the other two switches. E

High Voltage Latch-Up Proof, Quad SPST Switches 0.07 pC charge injection

GENERAL DESCRIPTION The ADG5212/ADG5213 contain four independent single-pole/single-throw (SPST) switches. The ADG5212 switches turn on with Logic 1. The ADG5213 has two switches with digital control logic similar to that of the ADG5212; however, the logic is inverted on the other two switches. E

High Voltage Latch-Up Proof, Quad SPST Switches 0.07 pC charge injection

GENERAL DESCRIPTION The ADG5212/ADG5213 contain four independent single-pole/single-throw (SPST) switches. The ADG5212 switches turn on with Logic 1. The ADG5213 has two switches with digital control logic similar to that of the ADG5212; however, the logic is inverted on the other two switches. E

K-Band 2-Stage Power Amplifier

DESCRIPTION The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High Power Amplifier (HPA) . FEATURES ● RF frequency : 24.5 to 26.5 GHz ● Linear gain : ³ 13 dB ● P1dB : ³ 23 dBm ● DC power : Vd = 5 V, Id1 + Id2 = 270 mA

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

Transimpedance amplifier 140MHz

DESCRIPTION The SA5212A is a 14kΩ transimpedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications where very low signal levels obtained from high-impedance sources need to be amplified. FEATURES

Transimpedance amplifier 140MHz

DESCRIPTION The SA5212A is a 14kΩ transimpedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications where very low signal levels obtained from high-impedance sources need to be amplified. FEATURES

Transimpedance amplifier 140MHz

DESCRIPTION The SA5212A is a 14kΩ transimpedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications where very low signal levels obtained from high-impedance sources need to be amplified. FEATURES