LC2MOS 5 ohm RON SPST Switches

GENERAL DESCRIPTION The ADG451/ADG452/ADG453 are monolithic CMOS devices comprising four independently selectable switches. They are designed on an enhanced LC2MOS process that provides low power dissipation yet gives high switching speed and low on resistance. The on resistance profile is very

LC2MOS 5Ω 导通电阻RON 单刀单掷开关

ADG453是一款单芯片CMOS器件，内置四个独立可选的开关。它采用增强型LC2MOS 工艺设计，具有低功耗、高开关速度和低导通电阻特性。\n\n ADG453有两个开关的接通条件是相关控制输入为逻辑高电平，而其它两个开关的控制逻辑则相反。接通时，各开关在两个方向的导电性能相同，输入信号范围可扩展至电源电压范围。所有开关均为先开后合式，适合多路复用器应用。设计本身具有低电荷注入特性，当开关数字输入时，可实现较小的瞬变。 • 低导通电阻：4 Ω\n\n• 导通电阻平坦度：0.2 Ω\n\n• 最大额定电源电压：44 V\n\n• 模拟信号范围：± 15 V\n\n• 额定电源电压：±5 V、+12V和±15 V\n\n• 超低功耗：18 µW;

LC2MOS 5 ohm RON SPST Switches

GENERAL DESCRIPTION The ADG451/ADG452/ADG453 are monolithic CMOS devices comprising four independently selectable switches. They are designed on an enhanced LC2MOS process that provides low power dissipation yet gives high switching speed and low on resistance. The on resistance profile is very

LC2MOS 5 ohm RON SPST Switches

GENERAL DESCRIPTION The ADG451/ADG452/ADG453 are monolithic CMOS devices comprising four independently selectable switches. They are designed on an enhanced LC2MOS process that provides low power dissipation yet gives high switching speed and low on resistance. The on resistance profile is very

LC MOS 5RON SPST Switches

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LC2MOS 5 廓 RON SPST Switches

文件：411.53 Kbytes Page：16 Pages

LC2MOS 5 廓 RON SPST Switches

文件：411.53 Kbytes Page：16 Pages

LC2MOS 5 廓 RON SPST Switches

文件：411.53 Kbytes Page：16 Pages

LC2MOS 5 廓 RON SPST Switches

文件：411.53 Kbytes Page：16 Pages

LC2MOS 5 廓 RON SPST Switches

文件：411.53 Kbytes Page：16 Pages

LC2MOS 5 廓 RON SPST Switches

文件：411.53 Kbytes Page：16 Pages

LC2MOS 5 廓 RON SPST Switches

文件：411.53 Kbytes Page：16 Pages

LC2MOS 5 廓 RON SPST Switches

文件：411.53 Kbytes Page：16 Pages

LC2MOS 5 廓 RON SPST Switches

文件：411.53 Kbytes Page：16 Pages

LC2MOS 5 廓 RON SPST Switches

文件：411.53 Kbytes Page：16 Pages

LC2MOS 5 廓 RON SPST Switches

文件：411.53 Kbytes Page：16 Pages

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

N-CHANNEL POWER MOSFETS

Low-voltage avalanche regulator diodes

DESCRIPTION High performance voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The series consists of PLVA450A to PLVA468A. FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: a

CRT Display Video Output Amplifier

Features • Active load circuits • Wide bandwidth and high output voltage. Optimal for use in fH (horizontal deflection frequency) = 90 kHz class ultrahigh precision monitors. • Single 15-pin SIP molded package houses three channels.

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt