High Speed ANALOG-TO-DIGITAL CONVERTER

DESCRIPTION\nThe ADC803 is a high speed hybrid successive approximation analog-to-digital converter utilizing laser-trimmed thin film components.FEATURES\n●12-BIT RESOLUTION\n●LINEARITY ERROR: ±0.12%, max (C Grade)\n●NO MISSING CODES: –55°C to +125°C (S Grade)\n●HIGH SINAD RATIO: 72dB\n●LOW HARM ●12-BIT RESOLUTION\n●LINEARITY ERROR: ±0.12%, max (C Grade)\n●NO MISSING CODES: –55°C to +125°C (S Grade)\n●HIGH SINAD RATIO: 72dB\n●LOW HARMONIC DISTORTION: –73dB\n●CONVERSION TIME: 500ns, 8 Bits\n                              670ns, 10 Bits\n                              1.5µs, 12 Bits;

ANALOG-TO-DIGITAL CONVERTER

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Analog Composite to SDI Decoder

文件：3.266 Mbytes Page：52 Pages

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors