OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

18 V、725 µA、4 MHZ CMOS RRIO运算放大器

18 V, 725 A, 4 MHz CMOS RRIO Operational Amplifier

文件：896.1 Kbytes Page：32 Pages

18 V, 725 A, 4 MHz CMOS RRIO Operational Amplifier

文件：896.1 Kbytes Page：32 Pages

18 V, 725 A, 4 MHz CMOS RRIO Operational Amplifier

文件：896.1 Kbytes Page：32 Pages

18 V, 725 A, 4 MHz CMOS RRIO Operational Amplifier

文件：896.1 Kbytes Page：32 Pages

18 V, 725 A, 4 MHz CMOS RRIO Operational Amplifier

文件：896.1 Kbytes Page：32 Pages

18 V, 725 A, 4 MHz CMOS RRIO Operational Amplifier

文件：896.1 Kbytes Page：32 Pages

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

3 V, LVDS, Quad CMOS Differential Line Receiver

GENERAL DESCRIPTION The ADN4666 is a quad-channel, CMOS low voltage differential signaling (LVDS) line receiver offering data rates of over 400 Mbps (200 MHz) and ultralow power consumption. The device accepts low voltage (350 mV typical) differential input signals and converts them to a single-

TO066 TRANSISTOR MOUNTING KIT

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Varnished Chokes

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High Q, high self-resonant frequency

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