36 V, Precision, Low Noise, 16 MHz JFET Op Amp with Rail-to-Rail Output

FEATURES  Low offset voltage: ±25 μV typ  Low offset voltage drift  0.2 μV/°C typ  Low input bias current: 1 pA typ, 6 pA max  Low 1/f noise: 0.2 μV p-p, 0.1 Hz to 10 Hz typ  Voltage noise density: 5 nV/√Hz at 1 kHz typ  Gain bandwidth product: 16 MHz typ  High slew rate: 30 V/μs t

36 V, Precision, Low Noise, 16.5 MHz JFET Op Amp with Rail-to-Rail Output

FEATURES  Low offset voltage: ±30 μV typ  Low offset voltage drift: ±0.32 μV/°C typ  Low input bias current: ±0.8 pA typ, ±5 pA max  Low 1/f noise: 225 nV p-p, 0.1 Hz to 10 Hz typ  Voltage noise density: 5.1 nV/√Hz at 1 kHz typ  Gain bandwidth product: 16.5 MHz typ  High slew rate: 3

36 V, Precision, Low Noise, 16.5 MHz JFET Op Amp with Rail-to-Rail Output

36 V, Precision, Low Noise, 16.5 MHz JFET Op Amp with Rail-to-Rail Output

FEATURES  Low offset voltage: ±30 μV typ  Low offset voltage drift: ±0.32 μV/°C typ  Low input bias current: ±0.8 pA typ, ±5 pA max  Low 1/f noise: 225 nV p-p, 0.1 Hz to 10 Hz typ  Voltage noise density: 5.1 nV/√Hz at 1 kHz typ  Gain bandwidth product: 16.5 MHz typ  High slew rate: 3

36 V, Precision, Low Noise, 16.5 MHz JFET Op Amp with Rail-to-Rail Output

FEATURES  Low offset voltage: ±30 μV typ  Low offset voltage drift: ±0.32 μV/°C typ  Low input bias current: ±0.8 pA typ, ±5 pA max  Low 1/f noise: 225 nV p-p, 0.1 Hz to 10 Hz typ  Voltage noise density: 5.1 nV/√Hz at 1 kHz typ  Gain bandwidth product: 16.5 MHz typ  High slew rate: 3

36 V, Precision, Low Noise, 16.5 MHz JFET Op Amp with Rail-to-Rail Output

FEATURES  Low offset voltage: ±30 μV typ  Low offset voltage drift: ±0.32 μV/°C typ  Low input bias current: ±0.8 pA typ, ±5 pA max  Low 1/f noise: 225 nV p-p, 0.1 Hz to 10 Hz typ  Voltage noise density: 5.1 nV/√Hz at 1 kHz typ  Gain bandwidth product: 16.5 MHz typ  High slew rate: 3

36 V, Precision, Low Noise, 16.5 MHz JFET Op Amp with Rail-to-Rail Output

FEATURES  Low offset voltage: ±30 μV typ  Low offset voltage drift: ±0.32 μV/°C typ  Low input bias current: ±0.8 pA typ, ±5 pA max  Low 1/f noise: 225 nV p-p, 0.1 Hz to 10 Hz typ  Voltage noise density: 5.1 nV/√Hz at 1 kHz typ  Gain bandwidth product: 16.5 MHz typ  High slew rate: 3

500 mW Metallurgically Bonded Glass Surface Mount Zener Diodes

DESCRIPTION The 1N4099UR-1 through 1N4135UR-1 and 1N4614UR-1 through 1N4627UR-1 series are 500 mW, Zener voltage regulators in the surface mount, glass DO-213AA package. Voltages from 1.8 to 100V in 5, 2, and 1 tolerances are available. They are constructed with an internal metallurgical bond and