Serial LVDS 3 V A/D Converter

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封装/外壳：64-LFBGA，CSPBGA 包装：卷带（TR） 描述：IC ADC 8BIT PIPELINED 64CSPBGA 集成电路（IC） 模数转换器（ADC）

Quad 8-Bit, 65 MSPS Serial LVDS 3V A/D Converter

PRODUCT DESCRIPTION The AD9289 is a quad 8-bit, 65 MSPS analog-to-digital converter (ADC) with an on-chip sample-and-hold circuit that is designed for low cost, low power, small size, and ease of use. The product operates at up to a 65 MSPS conversion rate and is optimized for outstanding dynamic

Quad 8-Bit, 65 MSPS Serial LVDS 3V A/D Converter

PRODUCT DESCRIPTION The AD9289 is a quad 8-bit, 65 MSPS analog-to-digital converter (ADC) with an on-chip sample-and-hold circuit that is designed for low cost, low power, small size, and ease of use. The product operates at up to a 65 MSPS conversion rate and is optimized for outstanding dynamic

Quad 8-Bit, 65 MSPS Serial LVDS 3V A/D Converter

PRODUCT DESCRIPTION The AD9289 is a quad 8-bit, 65 MSPS analog-to-digital converter (ADC) with an on-chip sample-and-hold circuit that is designed for low cost, low power, small size, and ease of use. The product operates at up to a 65 MSPS conversion rate and is optimized for outstanding dynamic

Silicon Germanium HBT Amplifier

Abstract Stanford Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. The amplifier is manufactured using the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The process has a VBCEO=8V and an fT=25 GHz. The SiGe H

Medium Power Discrete SiGe Transistor

Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9289

Medium Power Discrete SiGe Transistor

Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9289

For Plasma Display Applications

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