Quad 8-Bit, 65 MSPS Serial LVDS 3V A/D Converter

PRODUCT DESCRIPTION The AD9289 is a quad 8-bit, 65 MSPS analog-to-digital converter (ADC) with an on-chip sample-and-hold circuit that is designed for low cost, low power, small size, and ease of use. The product operates at up to a 65 MSPS conversion rate and is optimized for outstanding dynamic

4路、8位、65 MSPS、串行LVDS ADC

AD9289是一款4路、8位、65 MSPS模数转换器（ADC），内置一个片内采样保持电路，专门针对低成本、低功耗、小尺寸和易用性而设计。该产品的转换速率最高可达65 MSPS，具有杰出的动态性能，适合小封装尺寸极为重要的应用。\n\n 该ADC要求采用+3V单电源供电以及LVDS或PECL-兼容型采样速率时钟信号，以便充分发挥其工作性能。对于大多数应用来说，无需外部基准电压源或驱动器件。单独的输出电源引脚支持LVDS兼容型串行数字输出电平。\n\n 为获得合适的LVDS串行数据速率，该ADC会自动倍乘采样速率时钟。它还提供MSB触发器，用于发送新输出字节信号。该ADC支持 • 一个封装中集成4个ADC\n• 串行LVDS数字输出数据速率高达\n• 提供数据时钟输出\n• 信噪比（SNR）：47 dB（至Nyquist频率）\n• 400 MHz全功率模拟带宽;

Serial LVDS 3 V A/D Converter

文件：917.75 Kbytes Page：33 Pages

Quad 8-Bit, 65 MSPS Serial LVDS 3V A/D Converter

PRODUCT DESCRIPTION The AD9289 is a quad 8-bit, 65 MSPS analog-to-digital converter (ADC) with an on-chip sample-and-hold circuit that is designed for low cost, low power, small size, and ease of use. The product operates at up to a 65 MSPS conversion rate and is optimized for outstanding dynamic

Quad 8-Bit, 65 MSPS Serial LVDS 3V A/D Converter

PRODUCT DESCRIPTION The AD9289 is a quad 8-bit, 65 MSPS analog-to-digital converter (ADC) with an on-chip sample-and-hold circuit that is designed for low cost, low power, small size, and ease of use. The product operates at up to a 65 MSPS conversion rate and is optimized for outstanding dynamic

Quad 8-Bit, 65 MSPS, Serial LVDS 3 V A/D Converter

文件：1.15053 Mbytes Page：32 Pages

Serial LVDS 3 V A/D Converter

文件：917.75 Kbytes Page：33 Pages

Serial LVDS 3 V A/D Converter

文件：917.75 Kbytes Page：33 Pages

High Speed ADC USB FIFO Evaluation Kit

文件：902.43 Kbytes Page：28 Pages

Serial LVDS 3 V A/D Converter

文件：917.75 Kbytes Page：33 Pages

封装/外壳：64-LFBGA，CSPBGA 包装：卷带（TR） 描述：IC ADC 8BIT PIPELINED 64CSPBGA 集成电路（IC） 模数转换器（ADC）

Silicon Germanium HBT Amplifier

Abstract Stanford Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. The amplifier is manufactured using the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The process has a VBCEO=8V and an fT=25 GHz. The SiGe H

Medium Power Discrete SiGe Transistor

Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9289

Medium Power Discrete SiGe Transistor

Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9289

For Plasma Display Applications

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