260 MHz, 16
8 Buffered Video Crosspoint Switches

PRODUCT DESCRIPTION The AD8110 and AD8111 are high-speed 16 × 8 video cross point switch matrices. They offer a –3 dB signal bandwidth greater than 260 MHz, and channel switch times of less than 25 ns with 1 settling. With –78 dB of crosstalk and –97 dB isolation (@ 5 MHz), the AD8110/AD8111 are

16x 8 Buffered Video Crosspoint Switches

PRODUCT DESCRIPTION The AD8110 and AD8111 are high-speed 16 × 8 video cross point switch matrices. They offer a –3 dB signal bandwidth greater than 260 MHz, and channel switch times of less than 25 ns with 1 settling. With –78 dB of crosstalk and –97 dB isolation (@ 5 MHz), the AD8110/AD8111 are

260 MHz, 16
8 Buffered Video Crosspoint Switches

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封装/外壳：80-LQFP 包装：管件 描述：IC VIDEO CROSSPOINT SWIT 80LQFP 集成电路（IC） 模拟开关 - 特殊用途

260 MHz, 16 x 8 Buffered Video Crosspoint Switches

PRODUCT DESCRIPTION The AD8110 and AD8111 are high speed 16 × 8 video cross-point switch matrices. They offer a –3 dB signal bandwidth greater than 260 MHz, and channel switch times of less than 25 ns with 1 settling. With –78 dB of crosstalk and –97 dB isolation (@ 5 MHz), the AD8110/AD8111 are

8mm VTR Sensor Amplifier

Overview The LB8111V is equipped with built-in amplifiers for use with reel FG, drum FG and drum PG applications to make this IC most suitable for portable VCR (Video Cassette Recorder) applications. Features • Built-in 2-channel reed FG amplifier. • Built-in drum FG amplifier. • Built-i

8mm VTR Sensor Amplifier

Overview The LB8111V is equipped with built-in amplifiers for use with reel FG, drum FG and drum PG applications to make this IC most suitable for portable VCR (Video Cassette Recorder) applications. Features • Built-in 2-channel reed FG amplifier. • Built-in drum FG amplifier. • Built-i

6-Pin DIP Optoisolators Transistor Output(No Base Connection)

6-Pin DIP Optoisolators Transistor Output(No Base Connection) The MOC8111, MOC8112 and MOC8113 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. The internal base–to–Pin 6 connection has been eliminated for improved n

PHOTOTRANSISTOR OPTOCOUPLERS

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