Low Cost Signal Conditioning 8-Bit ADC

GENERAL DESCRIPTION The AD670 is a complete 8-bit signal conditioning analogto-digital converter. It consists of an instrumentation amplifier front end along with a DAC, comparator, successive approximation register (SAR), precision voltage reference, and a threestate output buffer on a single

Low Cost Signal Conditioning 8-Bit ADC

文件：397.44 Kbytes Page：13 Pages

封装/外壳：20-LCC（J 形引线） 包装：管件 描述：IC ADC 8BIT SAR 20PLCC 集成电路（IC） 模数转换器（ADC）

模数转换器 - ADC 8-B Signal Condition

封装/外壳：20-LCC（J 形引线） 包装：管件 描述：IC ADC 8BIT SAR 20PLCC 集成电路（IC） 模数转换器（ADC）

FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1315 A Surge current 15 kA

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Multi TOPLED

Multi TOPLED® Features ●P-LCC-4 package ●color of package: white ●for use as optical indicator ●for backlighting, optical coupling into light pipes and lenses ●both chips can be controlled separately ●high signal efficiency possible by color change of the LED ●with approp

Multi TOPLED

Multi TOPLED® Features ●P-LCC-4 package ●color of package: white ●for use as optical indicator ●for backlighting, optical coupling into light pipes and lenses ●both chips can be controlled separately ●high signal efficiency possible by color change of the LED ●with approp

DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION

Description The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as l