High Precision 10 V Reference

GENERAL DESCRIPTION The AD587 represents a major advance in state-of-the-art monolithic voltage references. Using a proprietary ionimplanted buried Zener diode and laser wafer trimming of high stability thin-film resistors, the AD587 provides outstanding performance at low cost. FEATURES

High Precision 10 V Reference

文件：361.57 Kbytes Page：12 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC VREF SERIES 0.1% 8SOIC 集成电路（IC） 电压基准

High Precision 10 V Reference

GENERAL DESCRIPTION The AD587 represents a major advance in state-of-the-art monolithic voltage references. Using a proprietary ionimplanted buried Zener diode and laser wafer trimming of high stability thin-film resistors, the AD587 provides outstanding performance at low cost. FEATURES

High Precision 10 V Reference

GENERAL DESCRIPTION The AD587 represents a major advance in state-of-the-art monolithic voltage references. Using a proprietary ionimplanted buried Zener diode and laser wafer trimming of high stability thin-film resistors, the AD587 provides outstanding performance at low cost. FEATURES

High Precision 10 V Reference

GENERAL DESCRIPTION The AD587 represents a major advance in state-of-the-art monolithic voltage references. Using a proprietary ionimplanted buried Zener diode and laser wafer trimming of high stability thin-film resistors, the AD587 provides outstanding performance at low cost. FEATURES

High Precision 10 V Reference

GENERAL DESCRIPTION The AD587 represents a major advance in state-of-the-art monolithic voltage references. Using a proprietary ionimplanted buried Zener diode and laser wafer trimming of high stability thin-film resistors, the AD587 provides outstanding performance at low cost. FEATURES

High Precision 10 V Reference

GENERAL DESCRIPTION The AD587 represents a major advance in state-of-the-art monolithic voltage references. Using a proprietary ionimplanted buried Zener diode and laser wafer trimming of high stability thin-film resistors, the AD587 provides outstanding performance at low cost. FEATURES

High Precision 10 V Reference

文件：361.57 Kbytes Page：12 Pages

High Precision 10 V Reference

文件：361.57 Kbytes Page：12 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC VREF SERIES 0.1% 8SOIC 集成电路（IC） 电压基准

High Precision 10 V Reference

文件：361.57 Kbytes Page：12 Pages

High Precision 10 V Reference

文件：361.57 Kbytes Page：12 Pages

High Precision 10 V Reference

文件：361.57 Kbytes Page：12 Pages

NPN high-voltage transistors

DESCRIPTION NPN transistors in a TO-202 plastic package. FEATURES • Low feedback capacitance. APPLICATIONS • For use in video output stages of black and white and colour television receivers.

CATV amplifier modules

DESCRIPTION Hybrid amplifier modules for CATV systems operating over a frequency range of 40 to 550 MHz at a voltage supply of 24 V (DC). The BGY586 is intended for use as a pre-amplifier and BGY587 as a final amplifier. FEATURES • Excellent linearity • Extremely low noise • Silicon nitride p

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure — NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA • High Power Gain —

Silicon Diode Ultra Fast Switch

Features: ● Super Fast Switching Speed ● High Current Capability ● High Surge Current Capability ● Low Forward Voltage Drop ● High Reliability ● DO41 Type Package

1GHz INPUT DIVIDE BY 2, 4, 8 PRESCALER IC FOR PORTABLE SYSTEMS

1GHz INPUT DIVIDE BY 2, 4, 8 PRESCALER IC FOR PORTABLE SYSTEMS PPB1509GV is a divide by 2, 4, 8 prescaler IC for portable radio or cellular telephone applications. PPB1509GV is a shrink package version of PPB587G so that this small package contributes to reduce the mounting space. PPB1509GV is m