Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD548 is a low power, precision monolithic operational amplifier. It offers both low bias current (10 pA max, warmed up) and low quiescent current (200 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias current is guarantee

Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD548 is a low power, precision monolithic operational amplifier. It offers both low bias current (10 pA max, warmed up) and low quiescent current (200 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias current is guarantee

Precision, Low Power / High Performance / BiFET Operational Amplifiers

The AD548 is a low power, precision monolithic operational amplifier. It offers both low bias current (10 pA max, warmed up) and low quiescent current (200 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias current is guaranteed over the AD548’s entire

Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD548 is a low power, precision monolithic operational amplifier. It offers both low bias current (10 pA max, warmed up) and low quiescent current (200 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias current is guarantee

Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD548 is a low power, precision monolithic operational amplifier. It offers both low bias current (10 pA max, warmed up) and low quiescent current (200 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias current is guarantee

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available*

UHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The mounting flange provid