Package Drawings and Specifications

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封装/外壳：8-SOIC（0.154"，3.90mm 宽） 功能：全极开关 包装：散装 描述：MAGNETIC SWITCH OMNIPOLAR 8SOIC 传感器，变送器 磁性传感器 - 开关（固态）

450 MHz, Block D, Duplexer

封装/外壳：模块，SMA 连接器 包装：盒 描述：450 MHZ, BLOCK D, DUPLEXER RF/IF，射频/中频和 RFID 射频多路复用器

AM band-switching diode

DESCRIPTION Planar band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω. APPLICATION • Band switch

AM band-switching diode

DESCRIPTION Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

POWER TRANSISTOR NPN SILICON

High-Voltage NPN Silicon Transistor . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc • Gain Specified to 3.5 Amp • High Frequency Response to 2.5 MHz