Radiation Hardened Dual 4-Input NAND Gate

Description The Intersil ACS20MS is a radiation hardened dual 4-input NAND gate. A low on any input forces the output to a high logic state.The ACS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS

Radiation Hardened Dual 4-Input NAND Gate

Description\nThe Intersil ACS20MS is a radiation hardened dual 4-input NAND gate. A low on any input forces the output to a high logic state.The ACS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS Logi • 1.25 Micron Radiation Hardened SOS CMOS\n• Total Dose 300K RAD (Si)\n• Single Event Upset (SEU) Immunity\n   <1 x 10-10 Errors/Bit-Day (Typ)\n• SEU LET Threshold 80 MEV-cm2/mg\n• Dose Rate Upset 1011 RAD (Si)/s, 20ns Pulse\n• Latch-Up Free Under Any Conditions\n• Military Temperature Range: -55oC ;

Radiation Hardened Dual 4-Input NAND Gate

Description The Intersil ACS20MS is a radiation hardened dual 4-input NAND gate. A low on any input forces the output to a high logic state.The ACS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS