UMTS Band2 (1850-1910MHz) 3x3mm Power Amplifi er Module

Description The ACPM-5202 is a fully matched 10-pin surface mount module developed for UMTS Band2. This power amplifier module operates in the 1850-1910MHz bandwidth. The ACPM-5202 meets stringent UMTS linearity requirements up to 28dBm output power (Rel99). The 3mmx3mm form factor package is s

UMTS Band2 (1850-1910MHz) 3x3mm Power Amplifi er Module

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UMTS Band2 (1850-1910MHz) 3x3mm Power Amplifi er Module

1.55 關m Edge-Emitting LED DIP Module

GENERAL DESCRIPTION The OE5202G is a 1.55 μm, edge-emitting LED DIP module with a single-mode fiber pigtail. The high coupling efficiency of the OKI EE-LED yields a single-mode fiber output of over 20 μW. The module is an optimal light source for optical LAN systems and measuring instruments.

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features