Available in Stretched SO-6 package

Description The ACPL-P480 and ACPL-W480 fast speed optocouplers contain a GaAsP LED and photo detector with built-in Schmitt trigger to provide logic-compatible waveforms, eliminating the need for additional wave shaping. The totem pole output eliminates the need for a pull up resistor and allows

High CMR Intelligent Power Module and Gate Drive Interface Optocoupler

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高 CMR 智能功率模块和门驱动接口光电耦合器

ACPL-P480 快速光电耦合器包括 GaAsP LED和带有施密特触发电路光检测器，提供逻辑电平兼容输出，可节省额外波形整型需求。图腾柱输出可节省上拉电阻并直接驱动智能功率模块或门驱动电路。器件间最低的传播延迟差使这些光电耦合器成为通过降低开关死区时间改善变频器效率的理想方案。 ·提供通用 IPM 应用工业温度范围性能\n·传播延迟短\n·最小脉冲宽度失真\n·极高共模抑制 (CMR) 能力\n·滞后功能\n·图腾柱输出不需上拉电阻\n·采用延展型 SO-6 封装\n·安全规范认证申请中：\n- UL 1577、 3,750Vrms/1min\n- CSA\n- IEC/EN/DIN EN 60747-5-2  VIORM = 630Vpeak (选择 060)\n·选择包括：\n- 500 = 卷带式封装\n- 060 = IEC/EN/DIN EN60747-5-2  VIORM = 630Vpeak\n- xxxE = 无铅;

High CMR Intelligent Power Module and Gate Drive Interface Optocoupler

Description The ACPL-P480 and ACPL-W480 fast speed optocouplers contain a GaAsP LED and photo detector with built-in Schmitt trigger to provide logic-compatible waveforms, eliminating the need for additional wave shaping. The totem pole output eliminates the need for a pull up resistor and allows

NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

丝印代码：P6；NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: • Desi

Metal Oxide Varistors (MOV)

Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby

Shottky barrier diode

Features High reliability Small mold type Low VF Application Small current rectification