0.6 Amp Output Current IGBT Gate Driver Optocoupler

Description The ACPL-P314/W314 consists of a GaAsP LED optically coupled to an integrated circuit with a power output stage. These optocouplers are ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage range of the output stage

ACPL-P314 and ACPL-W314 0.6 Amp Output Current IGBT Gate Driver Optocoupler

Description The ACPL-P314/W314 consists of a GaAsP LED optically coupled to an integrated circuit with a power output stage. These optocouplers are ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage range of the output stage

0.6 Amp Output Current IGBT Gate Driver Optocoupler

Description The ACPL-P314/W314 consists of a GaAsP LED optically coupled to an integrated circuit with a power output stage. These optocouplers are ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage range of the output s

0.6-Amp Output Current IGBT Gate Driver Optocoupler

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0.6 Amp Output Current IGBT Gate Driver Optocoupler

Description The ACPL-P314/W314 consists of a GaAsP LED optically coupled to an integrated circuit with a power output stage. These optocouplers are ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage range of the output s

AC Input Multi-Channel Half-Pitch Phototransistor Optocoupler

Description The ACPL-224 is an AC-input dual channel half-pitch phototransistor optocoupler each of which contains 2 light emitting diodes connected inversely parallel & optically coupled to 2 separate phototransistors. It is packaged in an 8-pin SO package. Features • Current transfer rati

输出电流为 0.6Amp 的 IGBT 门驱动光电耦合器

ACPL-P314/W314 门驱动光电耦合器内含一个 GaAsP LED，可与一个功率输出级集成电路进行光电耦合。 这些光电耦合器可作为电机控制变频器应用中驱动功率 IGBT 和 MOSFET 的理想选择。 输出级的高工作电压范围提供了门控设备所需的驱动电压。 此类光电耦合器所提供的电压和电流令其成为直接驱动中小型功率\nIGBT 的理想之选。 ·高速响应\n·超高的共模抑制（CMR）能力\n·可靴带式供电电流\n·提供扩展型 SO-6\n·封装电气间隙和爬电距离为 8 毫米 （ACPL-W314）\n·安全认证：\n- UL 认证 3750 Vrms/1min (UL1577)\n- CSA认证\n- IEC/EN/DIN EN 60747-5-2 认证：VIORM = 630VPEAK (选择 060)\n·可选方案包括：\n- 500 = 卷带式封装方案\n- 060 = IEC/EN/DIN EN 60747-5-2：VIORM = 630 VPEAK\n- xxxE = 无铅方案;

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 610 mV to 940 mV • Total power dissipation: max. 400 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch