30V Complementary Enhancement Mode Field Effect Transistor

Description The ACE4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features N-channel • VDS=30V • ID=9A • RDS(ON)

MOSFET

60V Complementary Enhancement Mode Power MOSFET

Description ⚫ used in inverter ⚫ other applications Features N-Channel ⚫ VDS= 60V ⚫ ID=5.2A ⚫ RDS(ON)@VGS= 10V, TYP 27 mΩ ⚫ RDS(ON)@VGS= 4.5V, TYP 34 mΩ P-Channel ⚫ VDS= -60V ⚫ ID=-4.2A ⚫ RDS(ON)@VGS= -10V, TYP 50 mΩ ⚫ RDS(ON)@VGS= -4.5V, TYP 62 mΩ

40V Dual P N-Channel MOSFET

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Mounting Base, Triple Banana Jack and Binding Post, Miniature

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Heyco®-Tite EMC Brass Liquid Tight Cordgrips

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Networks

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Networks

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