30V Complementary Enhancement Mode Field Effect Transistor

Description The ACE4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features N-channel • VDS=30V • ID=9A • RDS(ON)

MOSFET

60V Complementary Enhancement Mode Power MOSFET

Description ⚫ used in inverter ⚫ other applications Features N-Channel ⚫ VDS= 60V ⚫ ID=5.2A ⚫ RDS(ON)@VGS= 10V, TYP 27 mΩ ⚫ RDS(ON)@VGS= 4.5V, TYP 34 mΩ P-Channel ⚫ VDS= -60V ⚫ ID=-4.2A ⚫ RDS(ON)@VGS= -10V, TYP 50 mΩ ⚫ RDS(ON)@VGS= -4.5V, TYP 62 mΩ

LEADLESS PACKAGE FOR SURFACE MOUNT

• 1N4614UR-1 THRU 1N4627UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED

500mW LOW NOISE ZENER DIODE 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4614 Series Silicon Zener Diode is a high quality voltage regulator designed for low leakage, low current and low noise applications

500mW LOW NOISE ZENER DIODE 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4614 Series Silicon Zener Diode is a high quality voltage regulator designed for low leakage, low current and low noise applications.

350mW LOW NOISE ZENER DIODE 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ4614 Series types are high quality silicon zener diodes designed for low leakage, low current and low noise applications.

Bipolar Integrated Circuit with Photodetection Function

Bipolar Integrated Circuit with Photodetection Function For infrared remote control systems Features High sensitivity (extension distance is 11 m or more) External parts not required Resin to cutoff visible light is used Supports various metal holders with improved electromagne