N-Channel Enhancement Mode MOSFET

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MOSFET

EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) • High Speed Switching Time : tstg=1 μS(Typ.) • Complementary to KTC2814.

Integrated Circuit 8-Circuit Display Driver

Description: The NTE1715 is an integrated circuit in an 18–Lead DIP type package designed for high–breakown fluorescent display tube drive. Features: • Built–In 8 Circuits • Output Incorporating Pull–Down Resistor for Direct Fluorescent Display Tube Drive • Direct Input for CMOS o

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5

Complementary Switch FET Drivers

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