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AC271

TO-8 CASCADABLE AMPLIFIERS

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TELEDYNE

华特力科

半固态电容

CAPXON

丰宾电子

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit (SLIC). • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126 • Collector–Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC

MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec

NTE

PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS

DESCRIPTION The TS271 is a low cost, low power single opertional amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption appl

STMICROELECTRONICS

意法半导体

PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS

DESCRIPTION The TS271 is a low cost, low power single opertional amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption appl

STMICROELECTRONICS

意法半导体

PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS

DESCRIPTION The TS271 is a low cost, low power single opertional amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption appl

STMICROELECTRONICS

意法半导体

AC271产品属性

  • 类型

    描述

  • 类型:

    SMD

  • 技术:

    HP

  • CR(μF):

    270

  • VR(V):

    25

  • T0_Max (°C):

    +125

  • T0_Min(℃):

    -55

  • 寿命 (hours):

    4000

  • 尺寸(mm):

    8x11.7

  • IR_100k(mA):

    1650

  • IR_120(mA):

    165

  • ESR(mΩ):

    25

  • 特性:

    High Temperature

  • AEC-Q200:

  • 防震:

更新时间:2026-5-24 11:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
26+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择

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