丝印代码：ABT853；8-BIT TO 9-BIT PARITY BUS TRANSCEIVERS

State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

丝印代码：ABT853；8-BIT TO 9-BIT PARITY BUS TRANSCEIVERS

State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

丝印代码：ABT853；8-BIT TO 9-BIT PARITY BUS TRANSCEIVERS

State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

丝印代码：ABT853；8-BIT TO 9-BIT PARITY BUS TRANSCEIVERS

State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

MICROMINIATURE POLARIZED RELAY

FEATURES • Conforms to IEC60950/UL1950/EN60950 spacing and high breakdown voltage Clearance: 1.0 mm (between coil and contacts) Creepage: 1.6 mm (between coil and contacts) Basic Insulation: 150 V Working Voltage, Pollution Degree 2 • Monostable and bistable (latching) versions av

3M??Polyester Tape 853

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