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丝印代码:ABT853;8-BIT TO 9-BIT PARITY BUS TRANSCEIVERS

State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

TI

德州仪器

丝印代码:ABT853;8-BIT TO 9-BIT PARITY BUS TRANSCEIVERS

State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

TI

德州仪器

丝印代码:ABT853;8-BIT TO 9-BIT PARITY BUS TRANSCEIVERS

State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

TI

德州仪器

丝印代码:ABT853;8-BIT TO 9-BIT PARITY BUS TRANSCEIVERS

State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JESD 17 Typical VOLP (Output Ground Bounce)

TI

德州仪器

Integrated Circuit Low Power, Narrow Band, FM IF System

Description: The NTE853 is a low power narrow band FM IF system which includes: Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. The NTE853 is designed for use in FM dual conversion communications equipment. Features: ● Low D

NTE

FAST RECOVERY RECTIFIER DIODE

DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diode very attractive components for many demanding applications. ■ LOW FORWARD VOLTAGE DROP ■ HIGH SURGE CURRENT CAPABILITY APPLICATIONS ■ AC-DC POWER SUPPLIES AND

STMICROELECTRONICS

意法半导体

FAST RECOVERY RECTIFIER DIODES

DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diodes very attractive components for many demanding applications. ■ LOW FORWARD VOLTAGE DROP ■ HIGH SURGE CURRENT CAPABILITY APPLICATIONS ■ AC-DC POWER SUPPLIES AND

STMICROELECTRONICS

意法半导体

REGULATED GaAs FET BIAS SUPPLY

文件:75.43 Kbytes Page:7 Pages

TELCOM

REGULATED GaAs FET BIAS SUPPLY

文件:75.43 Kbytes Page:7 Pages

TELCOM

更新时间:2026-5-23 23:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
N/A
20948
样件支持,可原厂排单订货!
TI
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
TI
15+
BGA
2860
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TI/德州仪器
2450+
DSBGA
9850
只做原厂原装正品现货或订货假一赔十!
Texas Instruments
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
TI/德州仪器
2402+
QFN
8324
原装正品!实单价优!
TI
22+
BGA
20000
公司只做原装 品质保障
TI
23+
BGA
3200
正规渠道,只有原装!
TI
23+
NA
20000
西门子
24+
TO92
6600

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