Low EMI Spread Spectrum Multiplier Clock

DESCRIPTION The ABE0101/02/04/06 are Spread Spectrum Clock Generators designed for the purpose of reducing EMI in high-speed digital systems. Any output frequency from 10 to 180MHz can be selected by programming 6 multiplier modes. The device is designed to operate from a crystal or reference clo

Low EMI Spread Spectrum Multiplier Clock

DESCRIPTION The ABE0101/02/04/06 are Spread Spectrum Clock Generators designed for the purpose of reducing EMI in high-speed digital systems. Any output frequency from 10 to 180MHz can be selected by programming 6 multiplier modes. The device is designed to operate from a crystal or reference clo

Low EMI Spread Spectrum Multiplier Clock

DESCRIPTION The ABE0101/02/04/06 are Spread Spectrum Clock Generators designed for the purpose of reducing EMI in high-speed digital systems. Any output frequency from 10 to 180MHz can be selected by programming 6 multiplier modes. The device is designed to operate from a crystal or reference clo

Silicon Schottky Barrier Diode for High Speed Switching

Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-0104 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general purpose 50 Ωgain block. Typical applications include narrow and wide bandwidth IF and RF amplifiers in c

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan