丝印代码：AB640；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

丝印代码：AB640；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

丝印代码：AB640；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

丝印代码：AB640；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

丝印代码：AB640；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

丝印代码：AB640；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounc

High Current Transistors

High Current Transistors PNP Silicon

High Current Transistors(PNP Silicon)

High Current Transistors PNP Silicon

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 60 Volts CURRENT - 6 Ampere)

VOLTAGE 20 to 60 Volts CURRENT 6.0 Ampers FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los