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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GaAs Infrared Light Emitting Diode GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 3.5 mW (typ.) ● Infrared light emission close to monochromatic light : λP = 950 nm (typ.) ● Small ceramic package | PANASONIC 松下 |   | ||
Silicon epitaxial planar type Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct | PANASONIC 松下 | | ||
Silicon MOS IC
| PANASONIC 松下 | | ||
Silicon NPN Transistor TV Vertical Deflection Description: The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters, converters, regulators, and switching circuits. Features: • High Voltage: VCEX = 400V • Gain Specified to 3.5A • High Frequency Response to 2.5MHz | NTE | | ||
POWER TRANSISTORS(10A,320-380V,125W)
| MOSPEC 统懋 | |
AAP162产品属性
- 类型
描述
- 型号
AAP162
- 功能描述
AAP162 - Dioda germanowa uniwersalna
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NTE |
23+ |
65480 |
|||||
23+ |
39200 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NTE |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
2022+ |
50 |
全新原装 货期两周 |
AAP162规格书下载地址
AAP162参数引脚图相关
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- AAP20M000000DHE18H
- AAP20M000000DHE18A
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- AAP20M000000BLJ18A
- AAP20M000000BLH18H
- AAP20M000000BLH18A
- AAP20M000000BLE18H
- AAP20M000000BLE18A
- AAP20M000000BJJ18H
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- AAP20M000000BJH18A
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- AAP20M000000BHJ18A
- AAP20M000000BHH18H
- AAP20M000000BHH18A
- AAP20M000000BHE18H
- AAP20M000000BHE18A
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DdatasheetPDF页码索引
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